Onsemi - FDMD8530

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FDMD8530 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMD8530
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Maximum Drain-Source On Resistance: .00125 ohm; JESD-30 Code: R-PDSO-N8;
Datasheet FDMD8530 Datasheet
In Stock1,588
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 49 ns
Maximum Drain Current (ID): 201 A
Maximum Pulsed Drain Current (IDM): 1047 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 78 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 148 ns
JESD-30 Code: R-PDSO-N8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .00125 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 661 mJ
Maximum Feedback Capacitance (Crss): 310 pF
JEDEC-95 Code: MO-240AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 201 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,588 $0.930 $1,476.840

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