890 W Power Field Effect Transistors (FET) 52

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXFH80N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.038 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	1.6 pF
IXFN50N80Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	UNSPECIFIED	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	200 A	5000 mJ	50 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.15 ohm	50 A	UPPER	R-XUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFH80N65X2-4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	3000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.038 ohm	80 A	SINGLE	R-PSFM-T4		DRAIN		AVALANCHE RATED	TO-247				1.6 pF
IXFT150N30X3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0083 ohm	150 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				1.7 pF
IXFT220N20X3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	500 A	2500 mJ	220 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0062 ohm	220 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				9 pF
IXFT170N25X3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2300 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0074 ohm	170 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				1.6 pF
IXFN44N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	110 A	2000 mJ	37 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL	.22 ohm	37 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFT94N30T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	235 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.036 ohm	94 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	116 pF
IXTX90P20P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	270 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.044 ohm	90 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					250 pF
IXTH12N150	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY		1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	750 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	2.2 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	80 pF
IXFN120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	650 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.024 ohm	108 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					5.5 pF	UL RECOGNIZED
IXFT80N65X2HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	3000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.038 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				1.6 pF
IXFH50N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	125 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.105 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				116 pF
IXTX32P60P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.35 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					77 pF
IXFK150N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0083 ohm	150 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					1.7 pF
IXTK32P60P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	3500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.35 ohm	32 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	77 pF
IXTK170P10P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	AMPLIFIER	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	510 A	3500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.014 ohm	170 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	930 pF
IXFK50N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	125 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.105 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				116 pF
IXFN170N30P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	UNSPECIFIED	SWITCHING	300 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	500 A	5000 mJ	138 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.018 ohm	138 A	UPPER	R-XUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXTK40P50P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	3500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.23 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	93 pF
IXTK90P20P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	270 A	3500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.044 ohm	90 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	250 pF
IXTN170P10P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	510 A	3500 mJ	170 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.012 ohm	170 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFH150N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0083 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				1.7 pF
IXFH220N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	500 A	2500 mJ	220 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0062 ohm	220 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				9 pF
IXFK220N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	500 A	2500 mJ	220 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0062 ohm	220 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				9 pF
IXFN40N110P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	1100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	100 A	2000 mJ	34 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.26 ohm	34 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFN70N60Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	600 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	280 A	5000 mJ	70 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.08 ohm	70 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFT150N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	375 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	150 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	162 pF
IXTN40P50P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	120 A	3500 mJ	40 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.23 ohm	40 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXTN90P20P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	270 A	3500 mJ	90 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.044 ohm	90 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXTN32P60P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	600 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	96 A	3500 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.35 ohm	32 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					77 pF	UL RECOGNIZED
IXTT12N150HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	1500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	750 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	2.2 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-268AA	e3	10	260	80 pF
IXTX40P50P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.23 ohm	40 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					93 pF
IXTX170P10P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	AMPLIFIER	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	510 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.014 ohm	170 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					930 pF
IXTT12N150	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY		1500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	750 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	2.2 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	80 pF
IXFB50N80Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	5000 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.15 ohm	50 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTH80N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.038 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247	e3	10	260	10 pF
IXFK170N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0074 ohm	170 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				1.6 pF
IXFH120N25T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.023 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	136 pF
IXFH150N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	375 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	162 pF
IXFN52N90P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	104 A	2000 mJ	43 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.16 ohm	43 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFH94N30T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	235 A	500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.036 ohm	94 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247	e3	10	260	116 pF
IXFN30N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	75 A	2000 mJ	30 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.35 ohm	30 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFH170N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0074 ohm	170 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				1.6 pF
IXFN38N100Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	152 A	5000 mJ	38 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL	.25 ohm	38 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFK80N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.038 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				1.6 pF
IXFT120N25T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.023 ohm	120 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA
IXFH32N100X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.22 ohm	32 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				10 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.