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Manufacturer | Littelfuse |
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Manufacturer's Part Number | IXTX170P10P |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 890 W; Maximum Feedback Capacitance (Crss): 930 pF; Terminal Form: THROUGH-HOLE; |
Datasheet | IXTX170P10P Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | 170 A |
Maximum Pulsed Drain Current (IDM): | 510 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 890 W |
Terminal Position: | SINGLE |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .014 ohm |
Avalanche Energy Rating (EAS): | 3500 mJ |
Maximum Feedback Capacitance (Crss): | 930 pF |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Additional Features: | AVALANCHE RATED |