IXFN50N80Q2 by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXFN50N80Q2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 890 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 50 A;
Datasheet	IXFN50N80Q2 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	200 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	NICKEL
No. of Terminals:	4
Maximum Power Dissipation (Abs):	890 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.15 ohm
Avalanche Energy Rating (EAS):	5000 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Reference Standard:	UL RECOGNIZED
Maximum Drain Current (Abs) (ID):	50 A

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