Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
ZXMP6A17E6TA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.92 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.6 A		3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.125 ohm	2.3 A	DUAL	R-PDSO-G6	1		Not Qualified	LOW THRESHOLD, HIGH RELIABILITY		e3	30	260
ZXMP6A17GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.7 A		4.1 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.125 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	HIGH RELIABILITY	TO-261AA	e3	30	260
DMP3099L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.08 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A		3.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.065 ohm	3.8 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
ZXMP10A18GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16.5 A		3.7 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.15 ohm	2.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260		AEC-Q101
DMG2305UX-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.052 ohm	4.2 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP4051LK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.9 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28.9 A		10.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.051 ohm	7.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
DMG2305UX-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.052 ohm	4.2 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP3098L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.08 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	22 ns	-55 Cel	54.2 ns	MATTE TIN	.07 ohm	3.8 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	147 pF	AEC-Q101
DMP4065S-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.08 ohm	2.4 A	DUAL	R-PDSO-G3	1					e3	30	260	40 pF
ZXMP10A18KTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.1 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.15 ohm	3.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD		e3	30	260
ZVN2110GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	4 ohm	.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
DMP3056LDM-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A		5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.045 ohm	5 A	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
ZXMP6A13GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.8 A		2.3 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.39 ohm	2.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
DMP6023LE-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	62.9 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.028 ohm	7 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP3056L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		-55 Cel		MATTE TIN	.05 ohm	4.3 A	DUAL	R-PDSO-G3	1					e3		260
ZVN0545GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.6 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	14 ns	-55 Cel	26 ns	MATTE TIN	50 ohm	.14 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3			4 pF
DMPH3010LK3-13	Diodes Incorporated																								MATTE TIN										e3		260
DMG2301L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.12 ohm	3 A	DUAL	R-PDSO-G3						e3		260	45 pF
DMG6602SVT-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.27 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13 A		3.4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.06 ohm	2.7 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260
DMP10H400SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		9 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.3 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3	30	260		AEC-Q101
DMN6068SE-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20.8 A	37.5 mJ	5.6 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.068 ohm	4.1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	HIGH RELIABILITY	TO-261AA	e3	30	260
ZXMP6A16KTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	9.76 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27.2 A		8.2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.085 ohm	5.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
DMP2305U-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.06 ohm	4.2 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	64 pF
DMP3098LQ-7	Diodes Incorporated																								MATTE TIN										e3		260
DMP2008UFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	113 mJ	54 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.008 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260
DMN10H220L-7	Diodes Incorporated																								MATTE TIN					1					e3	30	260
ZXMP10A17E6TA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.7 A		1.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.35 ohm	1.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
ZXMP6A17GQTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.7 A		4.3 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.125 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP4015SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		35 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.015 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260
DMHC3025LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	60 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.025 ohm	4.6 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP4015SSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.82 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		10.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.011 ohm	7.8 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260
DMP6110SVT-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	18 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.105 ohm	7.3 A	DUAL	R-PDSO-G6						e3		260	44 pF
ZVP2106GTA	Diodes Incorporated	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	5 ohm	.45 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
DMP4025SFGQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.95 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	4.65 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	128 pF	AEC-Q101; IATF 16949
ZXMHC6A07T8TA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	8.7 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.3 ohm	1.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMG6968U-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6.5 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	6.5 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	32 pF	MIL-STD-202
ZXMS6004DN8-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2.5 A	120 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.6 ohm		DUAL	R-PDSO-G8						e3		260
ZXMS6006DGTA	Diodes Incorporated	N-CHANNEL	COMPLEX	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A	490 mJ		4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.125 ohm		DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	TO-261AA	e3	30	260
DMP3099L-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.08 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A		3.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.065 ohm	3.8 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
ZVP4424GTA	Diodes Incorporated	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	11 ohm	.48 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
ZXMS6004DGTA	Diodes Incorporated																								MATTE TIN					1					e3	30	260
ZVN4310GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		1.67 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	33 ns	-55 Cel	46 ns	MATTE TIN	.54 ohm	1.67 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	20 pF
DMG2307L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.36 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.134 ohm	2.5 A	DUAL	R-PDSO-G3	1					e3	30	260	45.9 pF
DMP10H400SE-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	13.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.3 ohm	2.3 A	DUAL	R-PDSO-G4		DRAIN				e3		260	28 pF
DMN1019USN-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	9.3 A	DUAL	R-PDSO-G3	1					e3	30	260	375 pF
DMP10H400SEQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	13.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.3 ohm	2.3 A	DUAL	R-PDSO-G4		DRAIN		HIGH RELIABILITY		e3		260	28 pF	AEC-Q101
DMP3099LQ-7	Diodes Incorporated	P-CHANNEL	SINGLE	YES	1.08 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	10.2 mJ	3.8 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	9.8 ns	-55 Cel	46 ns	MATTE TIN	99 ohm	3.8 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY				260		AEC-Q101
DMP2035UVT-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.045 ohm	5.2 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.