Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMHC10H170SFJ-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	13 A		2.9 A	12	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.3 ohm	2.9 A	DUAL	R-PDSO-N12		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMN10H170SK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.16 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3		260	25 pF	AEC-Q101; MIL-STD-202
DMN15H310SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	.36 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.31 ohm	8.3 A	SINGLE	R-PSSO-G2		DRAIN		HIGH RELIABILITY	TO-252	e3		260		AEC-Q101
DMN2005UFGQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.27 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	130 A	58.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0087 ohm	18 A	DUAL	S-PDSO-N8	1	DRAIN		HIGH RELIABILITY		e3		260	477 pF	AEC-Q101; MIL-STD-202
DMN2028UVT-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G6	1					e3	30	260	78 pF	MIL-STD-202
DMN2991UFB4-7B	Diodes Incorporated																						NICKEL PALLADIUM GOLD										e4
DMN3032LFDBQ-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6		DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
DMNH4011SPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	90 A	170 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.01 ohm	13 A	DUAL	R-PDSO-F5		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMP2007UFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	50 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	-55 Cel	MATTE TIN	.007 ohm	18 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260
DMP2008UFG-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	113 mJ	54 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.008 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260
DMP2045UFY4-7	Diodes Incorporated																						NICKEL PALLADIUM GOLD					1					e4		260
DMP2305UVT-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.64 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4.23 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.06 ohm	3.49 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP3165LQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.09 ohm	3.3 A	DUAL	R-PDSO-G3						e3		260	35 pF	AEC-Q101; MIL-STD-202
DMPH4025SFVWQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	82 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN		HIGH RELIABILITY		e3		260	151 pF	AEC-Q101
DMT10H009LPS-13	Diodes Incorporated																						MATTE TIN					1					e3		260
DMT68M8LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	54.2 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0085 ohm	12.1 A	DUAL	R-PDSO-G8	1					e3	30	260	48 pF	MIL-STD-202
DMT69M8LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	60 A	20.6 mJ	45 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0095 ohm	45 A	DUAL	S-PDSO-F5	1	DRAIN				e3		260
DMTH10H003SPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	664 A	612 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.003 ohm	166 A	DUAL	R-PDSO-F8		DRAIN				e3		260	34 pF	MIL-STD-202
DMTH6010SPS-13	Diodes Incorporated																						MATTE TIN					1					e3		260
DMTH6016LSD-13	Diodes Incorporated																						MATTE TIN										e3		260
DMTH61M5SPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	640.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0015 ohm	225 A	DUAL	R-PDSO-F8		DRAIN				e3		260	184 pF
ZVP4424ZTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.6 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A		.2 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.009 ohm	.2 A	DUAL	R-PDSO-G4	1	DRAIN				e3	30	260
ZXMN6A08GQTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.08 ohm	3.8 A	DUAL	R-PDSO-G4		DRAIN				e3		260	24.1 pF	AEC-Q101; MIL-STD-202
ZXMN6A08GQTC	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.08 ohm	3.8 A	DUAL	R-PDSO-G4		DRAIN				e3		260	24.1 pF	AEC-Q101; MIL-STD-202
DMG4466SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		10 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.023 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN1019USNQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.01 ohm	9.3 A	DUAL	R-PDSO-G3				HIGH RELIABILITY		e3		260	375 pF	AEC-Q101; MIL-STD-202
DMN1019USNQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.01 ohm	9.3 A	DUAL	R-PDSO-G3				HIGH RELIABILITY		e3		260	375 pF	AEC-Q101; MIL-STD-202
DMN2011UFX-7	Diodes Incorporated																						NICKEL PALLADIUM GOLD										e4		260
DMNH6042SPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	35 A	65 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.05 ohm	24 A	DUAL	R-PDSO-F5		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMP2123LQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.072 ohm	3 A	DUAL	R-PDSO-G3						e3		260	101 pF	AEC-Q101; MIL-STD-202
DMP2305UQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.06 ohm	4.2 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP4006SPSW-13	Diodes Incorporated																						MATTE TIN										e3		260
DMP4006SPSWQ-13	Diodes Incorporated																						MATTE TIN										e3		260
DMT6017LSS-13	Diodes Incorporated																						MATTE TIN										e3		260
DMT8012LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.016 ohm	9.5 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	10 pF	MIL-STD-202
ZXMN4A06GQTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260	60 pF	AEC-Q101; MIL-STD-202
ZXMN4A06GQTC	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260	60 pF	AEC-Q101; MIL-STD-202
ZXMN6A09KQTC	Diodes Incorporated																						MATTE TIN					1					e3		260
ZXMP10A17GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.4 A		2.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.35 ohm	2.4 A	DUAL	R-PDSO-G4	1		Not Qualified		TO-261AA	e3	30	260
DMP3007SPS-13	Diodes Incorporated																						MATTE TIN										e3		260
DMPH4013SK3Q-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	69 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	55 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3		260	229 pF	AEC-Q101
DMPH6050SSDQ-13	Diodes Incorporated																						MATTE TIN										e3		260
DMTH6009LPS-13	Diodes Incorporated																						MATTE TIN					1					e3		260
ZVN2106G	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	2 ohm	.71 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e3	40	260
DMPH4013SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	69 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	55 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3		260	229 pF
DMP4025LK3Q-13	Diodes Incorporated																						MATTE TIN										e3		260
DMTH15H017LPSWQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	315.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0255 ohm	50 A	DUAL	R-PDSO-F8	1	DRAIN				e3			6.7 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMP2130L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.075 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.