Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMN10H170SVTQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.2 ohm	2.6 A	DUAL	R-PDSO-G6						e3		260	25 pF	AEC-Q101; MIL-STD-202
DMPH6250S-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.62 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A	8 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.24 ohm	2.4 A	DUAL	R-PDSO-G3	1					e3	30	260	23.2 pF	MIL-STD-202
DMT6015LFV-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	60 A	14.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	9.5 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	20 pF	MIL-STD-202
DMN2058U-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.13 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.035 ohm	4.6 A	DUAL	R-PDSO-G3						e3		260	39 pF
DMP2002UPS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	69.8 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.0019 ohm	60 A	DUAL	R-PDSO-F5	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMT5015LFDF-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.97 W	PLASTIC/EPOXY	SWITCHING	50 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A	10.4 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	.015 ohm	9.1 A	DUAL	S-PDSO-N6	1	DRAIN				e4	NOT SPECIFIED	NOT SPECIFIED	15.2 pF
DMNH6021SPDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	64 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.025 ohm	8.2 A	DUAL	R-PDSO-F6		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMP2018LFK-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	90 A		9.2 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	.016 ohm	7.1 A	DUAL	R-PDSO-N4	1	DRAIN		HIGH RELIABILITY		e4	30	260
ZXMP4A57E6TA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		3.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.08 ohm	2.9 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	78 pF
DMN2050L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A		5.9 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.029 ohm	5.9 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN3032LFDB-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6	1	DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
DMTH6016LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	145 A	11.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	10.6 A	DUAL	R-PDSO-F8		DRAIN				e3		260	27 pF
DMG4435SSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		7.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.016 ohm	7.3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMG6898LSDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.28 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		9.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	9.5 A	DUAL	R-PDSO-G8	1					e3		260	142 pF	AEC-Q101; IATF 16949
DMN6070SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	5.9 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.08 ohm	3.3 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP2003UPS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	350 A	67 mJ	150 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0022 ohm	150 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	599 pF
DMP2066LSN-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.04 ohm	4.6 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMP3017SFK-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	17 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	80 A	104 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	-55 Cel	170 ns	NICKEL PALLADIUM GOLD	.014 ohm	7.8 A	DUAL	R-PDSO-N6		DRAIN				e4		260	686 pF	MIL-STD-202
DMPH4013SPSQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	277 A	260 mJ	69 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.013 ohm	69 A	DUAL	R-PDSO-G5	1	DRAIN				e3		260	403 pF	AEC-Q101
DMTH6010LPD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	37.5 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	170 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	47.6 A	DUAL	R-PDSO-N8		DRAIN				e3			58 pF
DMTH6010SK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	27.7 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.008 ohm	16.3 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3		260		AEC-Q101
DMTH8012LK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	147 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.016 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN		HIGH RELIABILITY	TO-252	e3		260		AEC-Q101
DMC10H172SSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.16 ohm	2 A	DUAL	R-PDSO-G8						e3			20 pF	MIL-STD-202
DMC2020USD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.14 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	33.6 A		8.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.02 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMG4407SSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.82 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		9.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	155 Cel	SILICON				MATTE TIN	.011 ohm	8.2 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260
DMG6898LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.28 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		9.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	9.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	142 pF
DMN1019UVT-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	4.7 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	10.7 A	DUAL	R-PDSO-G6	1					e3	30	260
DMN2005UFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.27 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	130 A	58.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0087 ohm	18 A	DUAL	S-PDSO-N8	1	DRAIN				e3		260	477 pF	MIL-STD-202
DMN3032LFDBQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6		DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
DMNH6021SPSQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	88 A	64 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.028 ohm	55 A	DUAL	R-PDSO-F5		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMP2006UFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	28 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	370 ns	MATTE TIN	.0055 ohm	17.5 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260	900 pF
DMP2130LDM-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.08 ohm	3.4 A	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMP2160UFDB-7	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	13 A		3.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	.07 ohm	3.8 A	DUAL	S-PDSO-N6	1		Not Qualified	HIGH RELIABILITY		e4	30	260
DMP3050LVTQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	4.5 A	DUAL	R-PDSO-G6						e3			62 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMP45H150DHE-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	13.9 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.45 A	4 mJ	.25 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.15 ohm	.25 A	DUAL	R-PDSO-G4	1	DRAIN				e3		260	1 pF
DMT10H072LFV-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37.8 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	1.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.062 ohm	20 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	2.5 pF	MIL-STD-202
DMT10H9M9SCT	Diodes Incorporated																								MATTE TIN										e3		260
DMT3006LFDF-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	31 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.007 ohm	14.1 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	72 pF	MIL-STD-202
DMT61M5SPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	860 A	640.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0015 ohm	215 A	DUAL	R-PDSO-F8		DRAIN				e3		260	184 pF	MIL-STD-202
DMTH10H009LPSQ-13	Diodes Incorporated																								MATTE TIN										e3		260
DMTH10H017LPDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	93 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	236 A	150 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0174 ohm	13 A	DUAL	R-PDSO-F8	1	DRAIN				e3		260	20 pF	AEC-Q101; MIL-STD-202
DMTH10H4M5LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	240 mJ	100 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.043 ohm	100 A	DUAL	R-PDSO-F5	1	DRAIN				e3		260	25.5 pF
DMTH6016LFVWQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.38 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	160 A	12.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	41 A	DUAL	S-PDSO-F8	1	DRAIN		HIGH RELIABILITY		e3		260	23.4 pF	AEC-Q101; MIL-STD-202
ZXMS6005N8Q-13	Diodes Incorporated																								MATTE TIN					1					e3		260
DMC1018UPD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	13 A	25 mJ	9.5 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	9.5 A	DUAL	R-PDSO-F6		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMG3402LQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.052 ohm	4 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3		260	43.8 pF	AEC-Q101; MIL-STD-202
DMG9933USD-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.15 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.075 ohm	4.6 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMNH4005SPSQ-13	Diodes Incorporated																								MATTE TIN					1					e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.