Diodes Incorporated - DMN6070SSD-13

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DMN6070SSD-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN6070SSD-13
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 12 A;
Datasheet DMN6070SSD-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.3 A
Maximum Pulsed Drain Current (IDM): 12 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .08 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 5.9 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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