Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
ZXMHC3A01T8TA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	14.5 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.12 ohm	2.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
ZXMS6006DGQ-13	Diodes Incorporated																							MATTE TIN					1					e3		260
DMN10H220LQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.22 ohm	1.4 A	DUAL	R-PDSO-G3				HIGH RELIABILITY		e3		260	17 pF	AEC-Q101; MIL-STD-202
DMP3056L-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	-55 Cel	MATTE TIN	.05 ohm	4.3 A	DUAL	R-PDSO-G3						e3		260
ZXMC10A816N8TC	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.6 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	9.4 A		2.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.23 ohm	1.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
ZXMN10B08E6TA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.23 ohm	1.6 A	DUAL	R-PDSO-G6	1		Not Qualified	LOW THRESHOLD		e3	30	260
DMT4011LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15.6 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	65 A	21.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0178 ohm	10.8 A	DUAL	S-PDSO-N8		DRAIN				e3		260	30.6 pF	MIL-STD-202
DMTH8012LPSQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	10.2 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.017 ohm	10 A	DUAL	R-PDSO-F5		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
ZVN4206GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		1 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.5 ohm	1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
DMN6040SFDE-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.03 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.038 ohm	5.3 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	44 pF
DMP4051LK3Q-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.9 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28.9 A	50 mJ	10.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.051 ohm	7.2 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252AA	e3	30	260		AEC-Q101
DMT4011LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15.6 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	65 A	21.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0178 ohm	10.8 A	DUAL	S-PDSO-N8		DRAIN				e3		260	30.6 pF	MIL-STD-202
DMTH6002LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	294 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.003 ohm	100 A	DUAL	R-PDSO-F5	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMC4050SSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.14 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24.1 A		5.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.06 ohm	4.2 A	DUAL	R-PDSO-G8	3			HIGH RELIABILITY		e3	30	260
DMN10H100SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	32.6 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.08 ohm	14 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3		260
DMN10H220LE-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.22 ohm	2.3 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMN4800LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.46 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		9 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.014 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN6017SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	32 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.018 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260		AEC-Q101
DMP3017SFGQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A			5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel	MATTE TIN	.01 ohm	11.5 A	DUAL	S-PDSO-N5		DRAIN		GATE PROTECTED		e3		260	294 pF	AEC-Q101
DMP4047SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	16 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.045 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3		260
DMTH43M8LFGQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.2 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	400 A	165 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.003 ohm	100 A	DUAL	S-PDSO-N8	1	DRAIN		HIGH RELIABILITY		e3		260	88 pF	AEC-Q101; MIL-STD-202
ZVNL120GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	10 ohm	.32 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
ZXMP6A17KTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	9.25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20.3 A		6.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.125 ohm	4.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
DMN10H120SE-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.11 ohm	3.6 A	DUAL	R-PDSO-G4	1	DRAIN				e3	30	260
DMN10H220L-13	Diodes Incorporated																							MATTE TIN					1					e3	30	260
DMN3008SFGQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	101 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0055 ohm	17.6 A	DUAL	S-PDSO-N5		DRAIN		HIGH RELIABILITY		e3		260	459 pF	AEC-Q101
DMN3008SFGQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	101 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0055 ohm	17.6 A	DUAL	S-PDSO-N5		DRAIN		HIGH RELIABILITY		e3		260	459 pF	AEC-Q101
DMN6013LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	58.3 A	56.8 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.013 ohm	10.3 A	DUAL	S-PDSO-N5	1	DRAIN				e3		260	132 pF
DMPH6023SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	60 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.033 ohm	7.3 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252				143 pF
DMN10H220LFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	44 A	1.1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.222 ohm	11 A	DUAL	S-PDSO-N8		DRAIN				e3		260	12 pF
DMN2009LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A		12 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.008 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e3		260
DMN6068SEQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20.8 A	37.5 mJ	5.6 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.068 ohm	4.1 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP2004UFG-7	Diodes Incorporated																							MATTE TIN										e3		260
DMP34M4SPS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	350 A	180 mJ	87 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.006 ohm	87 A	DUAL	R-PDSO-F5	1					e3	30	260
ZVN4206GVTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	1 ohm	1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
ZXMP10A16KTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.285 ohm	4.6 A	DUAL	R-PDSO-G4	1		Not Qualified	FAST SWITCHING, LOW THRESHOLD		e3	30	260
DMN10H220LDV-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	2	42 A	1.1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.222 ohm	10.5 A	DUAL	S-PDSO-F8		DRAIN				e3		260	12 pF
DMNH6022SSDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	45 A	24 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.03 ohm	7.1 A	DUAL	R-PDSO-G8				HIGH RELIABILITY		e3		260		AEC-Q101
ZXMS6004N8Q-13	Diodes Incorporated																							MATTE TIN										e3		260
BAV170Q-13-F	Diodes Incorporated
DMTH12H007SPS-13	Diodes Incorporated																							MATTE TIN										e3		260
ZXMS6001N3TA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		550 mJ	1.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.675 ohm	1.1 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified		TO-261AA	e3	30	260
DMN10H099SFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.31 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.08 ohm	3.6 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	31.3 pF	MIL-STD-202
DMN10H099SFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.31 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.08 ohm	3.6 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	31.3 pF	MIL-STD-202
DMN3007LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		16 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.007 ohm	16 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN3007LSSQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		16 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.007 ohm	16 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMN3024LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46.5 A		14.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.024 ohm	9.78 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
DMTH8028LPSWQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	166.8 A	23.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	41.7 A	DUAL	R-PDSO-F8		DRAIN				e3		260	32 pF	AEC-Q101; IATF 16949; MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.