Diodes Incorporated Power Field Effect Transistors (FET) 1,827

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMNH6069SFVWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

72 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.05 ohm

5 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMP2040USS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

13.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.033 ohm

15 A

DUAL

R-PDSO-G8

e3

30

260

105 pF

MIL-STD-202

DMP2066LSS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

26 A

6.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.04 ohm

6.5 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMT10H009LK3-13

Diodes Incorporated

MATTE TIN

e3

260

DMT12H007LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

360 A

365 mJ

90 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0078 ohm

90 A

DUAL

R-PDSO-F5

DRAIN

e3

260

17.8 pF

DMT35M4LFVW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

110 A

25 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.006 ohm

16 A

DUAL

S-PDSO-F8

DRAIN

e3

260

27 pF

DMT47M2LDVQ-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

14.8 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

120 A

24.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0108 ohm

30.2 A

DUAL

S-PDSO-F8

1

DRAIN

HIGH RELIABILITY

e3

260

14.8 pF

AEC-Q101; MIL-STD-202

DMTH10H032LPDWQ-13

Diodes Incorporated

MATTE TIN

e3

DMTH8030LPDWQ-13

Diodes Incorporated

MATTE TIN

e3

260

ZXMP4A16KTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.06 ohm

9.9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOW THRESHOLD; FAST SWITCHING

e3

30

260

DMG4800LK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.71 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

10 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.017 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

HIGH RELIABILITY

TO-252AA

e3

30

260

DMN2009USS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

12.1 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.008 ohm

12.1 A

DUAL

R-PDSO-G8

3

e3

30

260

DMN2022UNS-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

SQUARE

ENHANCEMENT MODE

2

60 A

14.7 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.017 ohm

10.7 A

DUAL

S-PDSO-F8

e3

260

160 pF

MIL-STD-202

DMN2024UDH-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.76 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

45 A

8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.023 ohm

5.2 A

DUAL

S-PDSO-N8

DRAIN

e4

30

260

38 pF

MIL-STD-202

DMN3015LSD-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

80 A

25 mJ

8.4 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

8.4 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMN4800LSSL-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.46 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.014 ohm

6.7 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

DMP3007LK3-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMP3160L-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.08 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.122 ohm

2.7 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD, HIGH RELIABILITY

e3

30

260

DMP4013SPSQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.4 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

244 A

176 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

DRAIN

e3

260

229 pF

AEC-Q101

DMP45H4D9HK3-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

187 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

4.9 ohm

3 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

30

260

DMPH1006UPSQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

17 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.006 ohm

80 A

DUAL

R-PDSO-F8

DRAIN

e3

260

895 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT3006LFVQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

90 A

29 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

60 A

DUAL

S-PDSO-F8

1

DRAIN

e3

260

72 pF

AEC-Q101; MIL-STD-202

DMTH10H017LPD-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

93 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

236 A

50 mJ

59 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.6 W

175 Cel

SILICON

-55 Cel

TIN

17.4 ohm

59 A

DUAL

R-PDSO-N8

1

DRAIN

HIGH RELIABILITY

e3

30

260

20 pF

AEC-Q101

DMTH3002LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

150 A

700 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0025 ohm

100 A

DUAL

R-PDSO-F5

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

DMTH4004SPS-13

Diodes Incorporated

MATTE TIN

e3

260

DMTH4004SPSQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

200 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

.0027 ohm

31 A

DUAL

R-PDSO-F5

DRAIN

HIGH RELIABILITY

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

DMTH4007SPDQ-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

192 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0086 ohm

12.5 A

DUAL

R-PDSO-F8

DRAIN

e3

260

84.8 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH4011SPD-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMTH41M8SPSQ-13

Diodes Incorporated

Matte Tin (Sn)

1

e3

NOT SPECIFIED

NOT SPECIFIED

DMTH6012LPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53.6 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

7.9 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.014 ohm

11.5 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

27 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMP2075UVT-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.075 ohm

3.8 A

DUAL

R-PDSO-G6

1

e3

30

260

87 pF

MIL-STD-202

DMP2035UVT-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.045 ohm

5.2 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMHT6016LFJ-13

Diodes Incorporated

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

14.8 A

11.7 mJ

10.6 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.022 ohm

10.6 A

DUAL

R-PDSO-N12

e3

30

260

DMT3006LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27.8 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

31 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

55.6 A

DUAL

S-PDSO-N5

1

DRAIN

e3

30

260

72 pF

MIL-STD-202

AF6930NSA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.1 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.5 A

e0

DMP26M1UFG-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

110 A

71 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0055 ohm

71 A

DUAL

S-PDSO-N8

DRAIN

e3

260

564 pF

DMT12H060LFDF-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

115 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

20 A

21.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.065 ohm

4.4 A

DUAL

S-PDSO-N6

DRAIN

e4

7 pF

MIL-STD-202

DMT35M4LFDF4-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.19 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

25 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.009 ohm

12 A

DUAL

S-PDSO-N6

DRAIN

e3

50 pF

MIL-STD-202

DMS3014SFGQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.1 W

150 Cel

SILICON

-55 Cel

MATTE TIN

15.5 ohm

9.5 A

DUAL

S-PDSO-N5

1

DRAIN

AVALANCHE ENERGY RATED

e3

260

120 pF

AEC-Q101

AF4362NSA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

18 A

e0

AF4410NSLA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

260

DT410EL

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.1 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.25 ohm

2.1 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

e0

DMN4031SSDQ-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.031 ohm

4.3 A

DUAL

R-PDSO-G8

e3

260

58 pF

AEC-Q101; IATF 16949; MIL-STD-202

UZVNL110GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4.5 ohm

.6 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMT15H017LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

PLASTIC/EPOXY

SWITCHING

150 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

230 A

315.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0255 ohm

58 A

DUAL

R-PDSO-F8

DRAIN

e3

260

6.7 pF

DMP2022LSS

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.013 ohm

10 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

AF9412NSLA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

9.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.4 A

260

DMT5015LFDF-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.97 W

PLASTIC/EPOXY

SWITCHING

50 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

60 A

10.4 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

.015 ohm

9.1 A

DUAL

S-PDSO-N6

1

DRAIN

e4

NOT SPECIFIED

NOT SPECIFIED

15.2 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.