Diodes Incorporated - DMHC10H170SFJ-13

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DMHC10H170SFJ-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMHC10H170SFJ-13
Description N-CHANNEL AND P-CHANNEL; Configuration: 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Datasheet DMHC10H170SFJ-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.9 A
Maximum Pulsed Drain Current (IDM): 13 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 12
Maximum Power Dissipation (Abs): 2.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N12
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .3 ohm
Other Names: DMHC10H170SFJ-13DICT
DMHC10H170SFJ-13DITR
DMHC10H170SFJ-13DIDKR
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 2.9 A
Peak Reflow Temperature (C): 260
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