Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTH27N35MB

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

27 A

e0

IXTH21N4S

Littelfuse

IXFA56N30X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

320 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

112 A

700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.027 ohm

56 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

3 pF

IXFA16N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

347 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

800 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.47 ohm

16 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

8.6 pF

IXTK44N50L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.15 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXTH67N08MA

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

67 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

67 A

e0

IXTY90N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

230 A

300 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0084 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252AA

e3

10

260

102 pF

IXFH18N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFX64N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

2500 mJ

64 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.085 ohm

64 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFT30N85XHV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.22 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

30 pF

IXTP230N04T4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

340 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

700 A

600 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0029 ohm

230 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

760 pF

IXFX250N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

700 A

3000 mJ

250 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

.0065 ohm

250 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

NOT SPECIFIED

NOT SPECIFIED

IXFH70N30Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.054 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

90 pF

IXFA22N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

400 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.39 ohm

22 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

3.4 pF

IXFH230N10T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0047 ohm

230 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

195 pF

IXTP260N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

780 A

600 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0033 ohm

260 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

e1

215 pF

IXFN82N60Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

240 A

4000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.075 ohm

66 A

UPPER

R-PUFM-X4

ISOLATED

120 pF

UL RECOGNIZED

IXFH42N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.185 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

2.8 pF

IXFX120N30T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

330 A

2500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.024 ohm

120 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

135 pF

IXFH22N60X2A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.145 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

1.3 pF

AEC-Q101

IXFA18N60X

Littelfuse

MATTE TIN

1

e3

10

260

IXFH6N120

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.6 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFK140N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

380 A

3000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.017 ohm

140 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

185 pF

IXFT80N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

360 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

2500 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0125 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268

e3

10

260

IXTA42N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

400 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.045 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

37 pF

IXTA1N300P3HV

Littelfuse

Matte Tin (Sn)

1

e3

10

260

IXFK73N30Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

292 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.045 ohm

73 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFB38N100Q2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

152 A

5000 mJ

38 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.25 ohm

38 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFN64N50PD3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

200 A

2500 mJ

50 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.085 ohm

50 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXTY05N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

17 ohm

.75 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252AA

e3

10

260

8 pF

IXFR30N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.25 ohm

15 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXTH16P20

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

16 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.16 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

IXFA220N06T3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

440 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

500 A

900 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.004 ohm

220 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

50 pF

IRF352

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

13 A

e0

IXTA1R6N50D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

2.3 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AA

e3

10

260

16.5 pF

MMIX1F360N15T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

680 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

3000 mJ

235 A

21

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0044 ohm

235 A

DUAL

R-PDSO-G21

ISOLATED

AVALANCHE RATED

IXTP15N25MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXTA12N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

300 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.3 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

1.5 pF

IXFN39N90V

Littelfuse

IXTA170N075T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

360 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

510 A

600 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.0054 ohm

170 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

148 pF

IXTP102N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.018 ohm

102 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

95 pF

IXFH80N08

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.009 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

IXTA88N085T7

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

85 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

500 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.011 ohm

88 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

TO-263

e3

10

260

IXFK48N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.135 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFT80N08

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.009 ohm

80 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-268

e3

10

260

IXTK120N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.022 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFX90N60X

Littelfuse

IXTK110N30

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

4000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.026 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-264AA

e1

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.