Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXFT10N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXFK80N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

3000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.038 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

1.6 pF

IXFT17N80Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.6 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTA340N04T4-7

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

480 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

750 A

500 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0017 ohm

340 A

SINGLE

R-PSSO-G6

1

DRAIN

AVALANCHE RATED

TO-263

e3

10

260

1226 pF

IXTA120N04T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

400 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.0061 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

140 pF

IXFT30N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTH05N250P3HV

Littelfuse

IXTA2N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

7 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

15 pF

IXFX36N60Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

144 A

2500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.165 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFN80N50Q2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

320 A

5000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.06 ohm

80 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFT32N48

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

480 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

128 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.13 ohm

32 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTP1R6N50D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2.3 ohm

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

16.5 pF

IXFH26N49Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

490 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

104 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFT44N50Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

830 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.14 ohm

44 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

56 pF

MMIX1F44N100Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

694 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

4000 mJ

30 A

21

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.245 ohm

30 A

DUAL

R-PDSO-G21

ISOLATED

IXTP90N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

.75 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.02 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXFT150N25X3HV

Littelfuse

IXTH44N25L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

400 W

PLASTIC/EPOXY

AMPLIFIER

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.075 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

245 pF

IXTH12N45MA

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12 A

e0

IXTP7N45

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7 A

e0

IXFT120N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

890 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

500 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.023 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

IXFH32N100X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.22 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

10 pF

IXTH10P50

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

MATTE TIN

.9 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTP15N25MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXTP8N50MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

IXFK24N120Q2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

4000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.65 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFX120N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

2500 mJ

120 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.024 ohm

120 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTA8N70X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

250 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.5 ohm

8 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

2.2 pF

IXFK20N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

780 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

1000 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.57 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFB82N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

5000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.075 ohm

82 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTP4N95A

Littelfuse

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

IXFK80N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.065 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXTH460P2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.27 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

22 pF

IRFP351

Littelfuse

N-CHANNEL

SINGLE

NO

180 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

16 A

e0

IXFN26N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

65 A

1000 mJ

23 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.39 ohm

23 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXFR20N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

500 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.64 ohm

11 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

MMIX1T550N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

830 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2000 A

3000 mJ

550 A

21

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0013 ohm

550 A

DUAL

R-PDSO-G21

ISOLATED

Not Qualified

AVALANCHE RATED

IXTH64N65X

Littelfuse

IXTP30N10MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

30 A

e0

IXTA102N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

455 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

750 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.018 ohm

102 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

95 pF

IXTP20N65X2M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.185 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

1.4 pF

IXFB40N110P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

PLASTIC/EPOXY

SWITCHING

1100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

2000 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.26 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTP2R4N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

200 mJ

2.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

2.4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXFT88N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

2000 mJ

88 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

88 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTP130N065T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

330 A

600 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0066 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

90 pF

IXTA150N15X4-7

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

480 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

260 A

1000 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0069 ohm

150 A

SINGLE

R-PSSO-G6

1

DRAIN

AVALANCHE RATED

TO-263

e3

10

260

4 pF

IXTK120N25

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

4000 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.02 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-264AA

e1

10

260

IXTH1910

Littelfuse

N-CHANNEL

SINGLE

NO

360 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.