Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXFN74N100X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1170 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	150 A	2000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.066 ohm	74 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					48 pF	UL RECOGNIZED
IXFT80N20Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.028 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				500 pF
IXTH5N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	180 W	150 Cel	SILICON					2.4 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD
IXTA50N28T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	340 W	PLASTIC/EPOXY		280 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.066 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AA				24 pF
IXFH54N65X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	625 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.059 ohm	54 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				21 pF
IXTA5N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	250 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AA	e3	10	260
IXFH34N65X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	446 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	750 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.1 ohm	34 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				2.6 pF
IXFK33N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	416 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	132 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	95 ns	-55 Cel	175 ns		.16 ohm	33 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				310 pF
IXTP160N075T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	430 A	750 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.006 ohm	160 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IXTY2R4N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.5 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.75 ohm	2.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
IXTA3N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	2.9 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
IXFT10N100Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.2 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3
IXFT14N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A		14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.75 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268	e3	10	260
IXFX26N60Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	1500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.25 ohm	26 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					210 pF
IXFH76N06-11	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	304 A	2000 mJ	76 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.011 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3
IXTH120N20X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0095 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN			TO-247				1.8 pF
IXTH35N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON					.1 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD
IXTY2N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	150 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	5.1 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
IXFH46N65X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	65 A	1200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.073 ohm	46 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				18 pF
IXTP2N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A	150 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE TIN	5.1 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB
IXTA160N075T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	430 A	750 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.006 ohm	160 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
IXFX15N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.7 ohm	15 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFH80N20Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.028 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD				500 pF
IXFH76N06-12	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	304 A	2000 mJ	76 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.012 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD
IXTA6N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.1 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
IXTA94N20X4-TRL	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0106 ohm	94 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-263AB				4 pF
IXFN34N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	UNSPECIFIED	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	136 A	3000 mJ	34 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.24 ohm	34 A	UPPER	R-XUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFT20N60Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1500 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.35 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
IXFT12N100QHV	Littelfuse
IXFX66N50Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	735 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	264 A	4000 mJ	66 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.08 ohm	66 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFT40N30Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.085 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				170 pF
IXTH50N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A		50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON				MATTE TIN	.045 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3
IXFH90N65X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.033 ohm	90 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				40 pF
IXFK66N50Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	735 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	264 A	4000 mJ	66 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.08 ohm	66 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1
IXFK110N06	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	2000 mJ	110 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.006 ohm	110 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA
IXFN66N50Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	735 W	UNSPECIFIED	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	264 A	4000 mJ	66 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.08 ohm	66 A	UPPER	R-XUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXTA4N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	150 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
IXTY4N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	150 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	10	260
IXFR180N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	720 A	3000 mJ	165 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.008 ohm	180 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
IXTP4N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	150 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IXTA180N10T7-TRL	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	450 A	750 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0064 ohm	180 A	SINGLE	R-PSSO-G6		DRAIN		AVALANCHE RATED	TO-263				162 pF
IXFH94N30T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	235 A	500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.036 ohm	94 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247	e3	10	260	116 pF
IXFH80N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	390 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	1200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.016 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				1.6 pF
IXFN140N25T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	690 W	PLASTIC/EPOXY	SWITCHING	250 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	400 A	3000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.017 ohm	120 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					185 pF	UL RECOGNIZED
IXFR40N50Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	320 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	2500 mJ	29 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.17 ohm	29 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXTA100N15X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	800 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0115 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	1.1 pF
IXFX38N80Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	735 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	4000 mJ	38 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.22 ohm	38 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFX32N90P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	2000 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.3 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.