IXFX26N60Q by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXFX26N60Q
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
Datasheet	IXFX26N60Q Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	26 A
Maximum Pulsed Drain Current (IDM):	104 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	360 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.25 ohm
Avalanche Energy Rating (EAS):	1500 mJ
Maximum Feedback Capacitance (Crss):	210 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	600 V
Additional Features:	AVALANCHE RATED

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