Littelfuse Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXFN50N120SIC	Littelfuse																																		NOT SPECIFIED	NOT SPECIFIED
IXFX120N30P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	3000 mJ	120 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.027 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					20 pF
IXTP60N20X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	106 A	350 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.021 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				.95 pF
IXFA26N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	460 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.13 ohm	26 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	1.2 pF
IXFH26N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.13 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD				1.2 pF
IXFT80N10Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.015 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				870 pF
IXFN340N06	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	1360 A	4000 mJ	340 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.003 ohm	340 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFN25N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	PLASTIC/EPOXY	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	100 A	3000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.33 ohm	25 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					375 pF	UL RECOGNIZED
IXFN200N06	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	600 A	2000 mJ	200 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.006 ohm	200 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFH80N10Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.015 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD				870 pF
IXFH70N65X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	780 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.044 ohm	70 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				25 pF
IXFK100N25	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.027 ohm	100 A	SINGLE	R-PSFM-T3		DRAIN			TO-264AA				600 pF
IXFH20N80Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1500 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.42 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3
IXTP5N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	360 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.7 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IXTA160N075T7	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	430 A	750 mJ		6	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.006 ohm	160 A	SINGLE	R-PSFM-G6		DRAIN	Not Qualified	AVALANCHE RATED	TO-263	e3
IXFR180N085	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	PLASTIC/EPOXY	SWITCHING	85 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	720 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin (Sn)	.007 ohm	180 A	SINGLE	R-PSIP-T3		ISOLATED				e3			2000 pF	UL RECOGNIZED
IXFK20N80Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1500 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.42 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA		NOT SPECIFIED	NOT SPECIFIED
IXTY5N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	250 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	10	260
IXTP120N20X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.0095 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				1.8 pF
IXTP55N075T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	85 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	250 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.023 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IXFT16N90Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY		900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.65 ohm	16 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				155 pF
IXTP5N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	89 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	250 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		PURE TIN	1.4 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB
IXTP64N055T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	170 A	250 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.013 ohm	64 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IXFA34N65X3	Littelfuse
IXFH30N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	1500 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.16 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3
IXFN39N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	154 A	4000 mJ	39 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.2 ohm	39 A	UPPER	R-PUFM-X4		DRAIN	Not Qualified	AVALANCHE RATED
IXFX14N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A		14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	.75 ohm	14 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTA182N055T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	490 A	1000 mJ		6	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.005 ohm	182 A	SINGLE	R-PSFM-G6		DRAIN	Not Qualified	AVALANCHE RATED	TO-263	e3
IXFK80N20Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.028 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				500 pF
IXFT20N80Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY		800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1500 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.42 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
IXFN170N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	PLASTIC/EPOXY	SWITCHING	100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	680 A			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.01 ohm	170 A	UPPER	R-PUFM-X4		ISOLATED							1200 pF	UL RECOGNIZED
IXFX34N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	136 A	3000 mJ	34 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	.24 ohm	34 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTY55N075T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	85 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.023 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3
IXFX24N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	3000 mJ	24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	.39 ohm	24 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTA3N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	180 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	2 ohm	3.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
IXTY3N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	180 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	3.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
IXFN25N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	100 A		25 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.35 ohm	25 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFK150N15	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN SILVER COPPER	.0125 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264	e1
CPC3714CTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	350 V	FLAT	RECTANGULAR	DEPLETION MODE	1	600 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON	-55 Cel		14 ohm		SINGLE	R-PSSO-F3		DRAIN							40 pF
IXFX90N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.033 ohm	90 A	SINGLE	R-PSIP-T3		DRAIN							700 pF
IXFH15N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.7 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3
IXTP3N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	180 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	3.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IXFH58N20Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	232 A	1000 mJ	58 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.04 ohm	58 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3
IXFH14N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.75 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3
IXTP8N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	400 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.8 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IXFX25N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	3000 mJ	25 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	.33 ohm	25 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTH21N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A		21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON		MATTE TIN	.25 ohm	21 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3
CPC3720CTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	350 V	FLAT	RECTANGULAR	DEPLETION MODE	1	.6 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON	-55 Cel		22 ohm		SINGLE	R-PSSO-F3		DRAIN							60 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.