Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTH15N35MA

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXFX32N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1500 mJ

32 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.32 ohm

32 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFH10N60

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

IXFR10N100Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

9 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1.2 ohm

9 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

IXFT16N120PHV

Littelfuse

IXTP4N90

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

IXFN240N15T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

150 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

600 A

2000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0052 ohm

240 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

270 pF

UL RECOGNIZED

IXFK-S48N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

192 A

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.1 ohm

48 A

SINGLE

R-PSFM-G2

DRAIN

Not Qualified

e1

10

260

IXFA12N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

1200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.1 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

10

260

IXTA26P20PTR

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

70 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.17 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

IXFH40N80XA

Littelfuse

IXTH39N10MB

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

39 A

e0

IXFX140N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

380 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.017 ohm

140 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

185 pF

IXTH72N20

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

288 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.033 ohm

72 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

10

260

IXTH20N65X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

320 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.21 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

22 pF

IXTA42N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.084 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXFT78N60X3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

780 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

2200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.038 ohm

78 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

36 pF

IXFH34N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

85 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.18 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

e3

10

260

7.8 pF

IXFR14N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.7 ohm

14 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

10

260

IXTA130N10T7

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

360 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

350 A

400 mJ

130 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0091 ohm

130 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-263

e3

10

260

IXFR15N80Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1000 mJ

13 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.6 ohm

13 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

IXFK120N30P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1130 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

3000 mJ

120 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.027 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

20 pF

IXFT15N80Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1000 mJ

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.6 ohm

15 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268

e3

10

260

IXFN44N50Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

176 A

2500 mJ

44 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

120 ohm

44 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXTH160N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

430 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0096 ohm

160 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFR32N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.29 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

IXTP42N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.084 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXFN320N17T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1070 W

PLASTIC/EPOXY

SWITCHING

170 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

800 A

5000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0052 ohm

260 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

410 pF

UL RECOGNIZED

IXTH40N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

PLASTIC/EPOXY

AMPLIFIER

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

2000 mJ

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.17 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

IXFN35N50

Littelfuse

N-CHANNEL

SINGLE

NO

325 W

ENHANCEMENT MODE

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 A

IXTA20N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

290 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

400 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.185 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

1.4 pF

IXFX180N06

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

720 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.005 ohm

180 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e1

IXFK44N50Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

176 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.12 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFT6N100F

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.9 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXFB40N110Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1560 W

PLASTIC/EPOXY

SWITCHING

1100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

4000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.26 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

120 pF

IXTY14N60X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.25 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252

e3

10

260

20 pF

IXTH34N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.096 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

1.7 pF

IXTP8N50MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

IXTH50N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

60 pF

IXTP3N90

Littelfuse

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3 A

e0

IXFX80N10Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.015 ohm

80 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e1

IXFT46N30T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

460 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

115 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.08 ohm

46 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

20 pF

IXTP50N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

1000 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXTH12N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

MATTE TIN

1.05 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

10

260

IXFH46N60X2A

Littelfuse

IXFH10N65

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

IXFT40N50Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

2 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

40 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTP8N70X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

250 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.5 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

2.2 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.