Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXTA1N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	200 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	11 ohm	1.5 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AA	e3	10	260
IXTP76N25T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	170 A	1500 mJ	76 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Silver/Copper (Sn/Ag/Cu)	.039 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e1	NOT SPECIFIED	NOT SPECIFIED
IXFN100N10	Littelfuse	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							100 A
IXFH36N55Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.16 ohm	36 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFN64N20	Littelfuse				300 W							1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							64 A
IXFT66N20Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	264 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.04 ohm	66 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-268AA	e3	10	260
IXTA48P05T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	300 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.03 ohm	48 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	215 pF
IXFA130N15X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	390 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	230 A	1200 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.009 ohm	130 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	14 pF
IXTA60N10T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	176 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.018 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, ULTRA LOW RESISTANCE	TO-263AB	e3	10	260	60 pF
IXTA75N10P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.025 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
IXTA05N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.25 A	50 mJ	.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	30 ohm	.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AA	e3	10	260
IXFT26N55Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	550 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	104 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.23 ohm	26 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
IXFH80N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	2500 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0125 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXTY1N80P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A	75 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	14 ohm	1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260	5.3 pF
IXFH14N60P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	327 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	700 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.54 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3
IXFH76N15T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.022 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				85 pF
IXTA8N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.5 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	2.2 pF
IXTP8N45MA	Littelfuse	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		8 A								e0
IXFH42N65X2A	Littelfuse
IXTK17N120L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.9 ohm	17 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	90 pF
IXFN26N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	PLASTIC/EPOXY	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1500 mJ	23 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.46 ohm	23 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXTA200N055T2-7	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	500 A	600 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0042 ohm	200 A	SINGLE	R-PSSO-G6	1	DRAIN		AVALANCHE RATED	TO-263	e3	10	260	228 pF
IXTA130N065T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	65 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	330 A	600 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0066 ohm	130 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	90 pF
IXFK64N60Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	250 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.095 ohm	64 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	90 pF
IXFK105N07	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	70 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	2000 mJ	105 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.007 ohm	110 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXTK180N15	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	720 A	3000 mJ	180 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.009 ohm	180 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-264AA	e1	10	260
IXTH39N08MB	Littelfuse	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		39 A								e0
IXFT24N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A		24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.23 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-268AA	e3	10	260
IXFK90N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A		90 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON				TIN SILVER COPPER	.023 ohm	90 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXTH24N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	390 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.145 ohm	24 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				1.2 pF
IXFH22N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.35 ohm	22 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFH70N15	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	1000 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	70 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFX170N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	4000 mJ	170 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.014 ohm	170 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFA26N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.066 ohm	26 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	1 pF
IXFH7N90	Littelfuse	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		7 A								e0
IXTP4N95	Littelfuse	N-CHANNEL	SINGLE	NO	135 W	PLASTIC/EPOXY		950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	100 ns	-65 Cel	160 ns	Tin/Lead (Sn/Pb)	4 ohm	4 A	SINGLE	R-PSFM-T3					TO-220AB	e0			60 pF
IXFH52N30	Littelfuse	N-CHANNEL	SINGLE	NO	360 W						ENHANCEMENT MODE	1			52 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							52 A
IXTH300N04T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0025 ohm	300 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	263 pF
IXTK33N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	416 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	132 A		33 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	416 W	150 Cel	SILICON				TIN SILVER COPPER	.17 ohm	33 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-264AA	e1	10	260
IXFN20N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	PLASTIC/EPOXY	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	50 A	1000 mJ	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.57 ohm	20 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFN40N90P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	PLASTIC/EPOXY	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1500 mJ	33 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Nickel (Ni)	.21 ohm	33 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED		UL RECOGNIZED
IXFH160N15T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	430 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0096 ohm	160 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	150 pF
IXTP3N80A	Littelfuse	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		3 A								e0
IXTA110N12T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	517 W	PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	800 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.014 ohm	110 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	43 pF
IXFK66N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.065 ohm	66 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				142 pF
IRFP353	Littelfuse	N-CHANNEL	SINGLE	NO	180 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		14 A								e0
IXFR30N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	1500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.16 ohm	29 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1	10	260
IXFA18N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	290 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	300 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.2 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	1.8 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.