Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXFK185N10	Littelfuse	N-CHANNEL	SINGLE	NO	600 W						ENHANCEMENT MODE	1			185 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							185 A
IXFT23N60Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.32 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-268AA	e3	10	260
IXTP100N15X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	800 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0115 ohm	100 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				1.1 pF
IXTH10P50P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	1500 mJ	10 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	1 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	42 pF
IXFX78N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.068 ohm	78 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					5 pF
IXFH7N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	180 W	150 Cel	SILICON				MATTE TIN	1.4 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFN64N50PD2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	625 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	200 A	2500 mJ	50 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.085 ohm	50 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFH60N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	2500 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.033 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXTA270N04T4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	800 A	750 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0022 ohm	270 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	980 pF
IXFK55N50F	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0085 ohm	55 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXTP30N08MA	Littelfuse	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		30 A								e0
IXTP150N15X4A	Littelfuse
IXTP300N04T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0025 ohm	300 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	263 pF
IXTK8N150L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	3.6 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN			TO-264AA	e1	10	260	70 pF
IXTP86N20X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.013 ohm	86 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				185 pF
IXTP8N70X2M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	250 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.55 ohm	8 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB				2.2 pF
IXFA5N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	300 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	2.8 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
IRFP251	Littelfuse	N-CHANNEL	SINGLE	NO	180 W						ENHANCEMENT MODE	1			33 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		33 A								e0
IXTP160N04T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.005 ohm	160 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				145 pF
IXTH14N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	100 ns	-55 Cel	150 ns	MATTE TIN	.7 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3	10	260	65 pF
IXFR64N60Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	568 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	250 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.104 ohm	42 A	SINGLE	R-PSIP-T3		ISOLATED		AVALANCHE RATED		e1	10	260	90 pF	UL RECOGNIZED
IXFX64N60Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	250 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.095 ohm	64 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					90 pF
IXTH130N15T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	330 A	1200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.012 ohm	130 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	320 pF
IXTH12N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON				MATTE TIN	.9 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3	10	260
IXTJ36N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A			3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.07 ohm	36 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3
IXFN160N30T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	900 W	PLASTIC/EPOXY	SWITCHING	300 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	440 A	5000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.019 ohm	130 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					45 pF	UL RECOGNIZED
IXTA260N055T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	780 A	600 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0033 ohm	260 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	215 pF
IXTH30N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	1200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.2 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFR10N100F	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	1000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	1.2 ohm	9 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e1	10	260
IXFX80N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	5000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.065 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					115 pF
IXFN15N100	Littelfuse	N-CHANNEL	SINGLE	NO	325 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									15 A
IXTP16N50PM	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	750 mJ	7.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Silver/Copper (Sn/Ag/Cu)	.42 ohm	7.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e1	NOT SPECIFIED	NOT SPECIFIED
IXFH150N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	375 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.015 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	162 pF
IXFT30N60X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.155 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				14 pF
IXTH1R8N220P3HV	Littelfuse
IXTK60N50L2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	AMPLIFIER	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	3000 mJ	60 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.1 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				172 pF
IXFX64N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.096 ohm	64 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTA15N50L2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	750 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.48 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	68 pF
IXFB52N90P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	2000 mJ	52 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.16 ohm	52 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTP8N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	250 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.5 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				2.2 pF
IXTP22N15MA	Littelfuse	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		22 A								e0
IXTH12N50MB	Littelfuse	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		12 A								e0
IXFX180N07	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	568 W	PLASTIC/EPOXY	SWITCHING	70 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	720 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.006 ohm	180 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					2500 pF
IXTP20N65X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	320 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.21 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB				22 pF
IXFX24N120Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	4000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.65 ohm	24 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFK40N90P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1500 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.21 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFH11N60	Littelfuse	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		11 A								e0
IXTA4N70X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	150 mJ		2			METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.85 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	1 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.