NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
934052130118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	60 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.014 ohm	69 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
BLP7G07S-140P,118	NXP Semiconductors	N-CHANNEL		YES							ENHANCEMENT MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel
934066864115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	24 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.021 ohm	7.3 A	DUAL	S-PDSO-N6		DRAIN								IEC-60134
PHB65N06LT/T3	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	175 ns	215 ns		.018 ohm	63 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified						290 pF
PHU108NQ03LT,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	187 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	180 mJ	75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.0075 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251
934056958127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	180 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.0075 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
BUK451-100A	NXP Semiconductors	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.85 ohm	3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
BUK566-60HT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	150 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	300 ns	700 ns		.022 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE					400 pF
PHB6N60	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	570 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				1.2 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
PMPB20EN	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			TIN	.0245 ohm	7.2 A	DUAL	S-PDSO-N6	1	DRAIN				e3				IEC-60134
PHT11N06LT/T3	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	60 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	8.3 W	150 Cel	SILICON	125 ns	210 ns		.04 ohm	4.9 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						150 pF
PHP18NQ10T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	79 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	70 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN	.09 ohm	18 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
934056874118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	36 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	120 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.0054 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
934063313115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	146 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.01 ohm	75 A	SINGLE	R-PSSO-G4		DRAIN		LOGIC LEVEL COMPATIBLE	MO-235
934056192118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	139 A	49 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.035 ohm	35 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
PMPB200EN	NXP Semiconductors
PHB65N06LT	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	175 ns	215 ns		.018 ohm	63 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified						290 pF
BF1211WR,135	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.18 W						DUAL GATE, ENHANCEMENT MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin (Sn)		.03 A			1					e3
BUK555-60B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	90 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	125 W	175 Cel	SILICON	190 ns	365 ns		.055 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB				275 pF
BUK472-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	35 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	22 W	150 Cel	SILICON	54 ns	85 ns		.25 ohm	6.6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB				50 pF
934063323115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	99 A	81 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.053 ohm	24.8 A	SINGLE	R-PSSO-G4		DRAIN
PHB95N03LTA	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	120 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.009 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
BUK566-60H-T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	150 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	300 ns	700 ns		.022 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE					400 pF
BUK554-200B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	50 mJ	8.2 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	90 W	175 Cel	SILICON	140 ns	255 ns		.5 ohm	8.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				90 pF
BUK555-200A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	100 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	175 Cel	SILICON	115 ns	235 ns		.23 ohm	14 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				80 pF
934065177118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	760 A	676 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.0035 ohm	120 A	SINGLE	R-PSSO-G2		DRAIN
PHB45NQ15T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	230 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90.2 A	180 mJ	45.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin (Sn)	.042 ohm	45.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
PHP110NQ06LT,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	280 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.0093 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
PHD98N03LT	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	111 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	183 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.0073 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3		260
934064003127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	470 A	700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.0069 ohm	100 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
PHB87N03LTT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	200 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	142 W	175 Cel	SILICON	195 ns	260 ns		.0105 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
934055409127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	120 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.015 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
BUK453-500B	NXP Semiconductors	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				7 ohm	1.6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
BUK545-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	140 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON	125 ns	290 ns		.085 ohm	13 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				150 pF
BUK104-50SP,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A			5	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.125 ohm	13 A	SINGLE	R-PSFM-T5		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ESD PROTECTED
PHP8N20E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	37 A	250 mJ	9.2 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	90 W	175 Cel	SILICON	90 ns	180 ns		.4 ohm	9.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	FAST SWITCHING	TO-220AB				80 pF
BF904R,235	NXP Semiconductors	N-CHANNEL	SINGLE	YES								1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin (Sn)		.03 A								e3
934064269118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	189 A	30 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.029 ohm	47 A	SINGLE	R-PSSO-G2		DRAIN		LOGIC LEVEL COMPATIBLE	TO-252
PHX20N06T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	51.6 A	30.3 mJ	12.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	.075 ohm	12.9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
934056574115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	36 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN	.089 ohm	7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
BUK545-100B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	140 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON	125 ns	290 ns		.11 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				150 pF
934067597115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	336 A	112.8 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.011 ohm	84 A	SINGLE	R-PSSO-G4		DRAIN		AVALANCHE RATED	MO-235					AEC-Q101; IEC-60134
BUK107-50GLT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.2 ohm	.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ESD PROTECTED
PHD101NQ03LT	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	166 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	185 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin (Sn)	.0075 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3	30	260
934067425115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63 A	12.5 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.072 ohm	16 A	SINGLE	R-PSSO-G4		DRAIN		AVALANCHE RATED	MO-235					AEC-Q101; IEC-60134
934058552127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	280 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.0071 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
PHP18NQ10T,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	79 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	70 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN	.09 ohm	18 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BLP25M705F	NXP Semiconductors	N-CHANNEL	SINGLE	YES							ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.