NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PHP6N50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

287 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.5 ohm

5.9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-220AB

934064002127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1120 A

1100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0023 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

PHP11N50E127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

676 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

10.4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-220AB

934056699118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

248 A

211 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0166 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

BLF7G22LS-250P

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F4

NOT APPLICABLE

SOURCE

Not Qualified

ESD PROTECTION

NOT SPECIFIED

NOT SPECIFIED

934067036115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

274 A

110 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

69 A

SINGLE

R-PSSO-G4

DRAIN

AVALANCHE RATED

MO-235

AEC-Q101; IEC-60134

BUK455-100B,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.1 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

PMPB29XNE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.033 ohm

5 A

DUAL

S-PDSO-N6

1

DRAIN

e3

IEC-60134

BLF145,112

NXP Semiconductors

N-CHANNEL

SINGLE

NO

68 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

6 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

68 W

200 Cel

SILICON

.75 ohm

6 A

RADIAL

O-CRFM-F4

NOT APPLICABLE

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PHB80N06LT118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.014 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

934055878118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

247 A

211 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PHB44N06T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

114 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

176 A

70 mJ

44 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.028 ohm

44 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

PHW13N40E127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

51 A

666 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

12.8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-247

PHP20N06E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

50 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

SILICON

75 ns

170 ns

.08 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

160 pF

BUK582-60AT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

30 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

100 ns

140 ns

.15 ohm

2.5 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

100 pF

934058425118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.005 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

PHP80N06T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.014 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTED

TO-220AB

BLF7G21LS-160,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

PMPB11EN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

34 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0145 ohm

9 A

DUAL

S-PDSO-N6

1

DRAIN

e3

IEC-60134

PHP1N60E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

120 mJ

1.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

50 W

150 Cel

SILICON

60 ns

70 ns

6 ohm

1.9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

10 pF

934056692127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

794 A

1600 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0059 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

934066132127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

830 A

676 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0033 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

934055699118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

70 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

.09 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

BUK582-60A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

30 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

100 ns

140 ns

.15 ohm

2.5 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

100 pF

PHX8NQ11T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27.7 W

PLASTIC/EPOXY

SWITCHING

110 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30.2 A

35 mJ

7.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

7.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

PHB60N06T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

232 A

110 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 ohm

58 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

PHD2N60E118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

144 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

1.9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

FAST SWITCHING

PHX6N28T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

275 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

45 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

5.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

BUK100-50GL,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

13.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.125 ohm

13.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IEC-134

BUK542-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

30 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

22 W

150 Cel

SILICON

88 ns

115 ns

.28 ohm

6.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

50 pF

PHP2N40

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

2.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

934067029115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

79.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

62 A

SINGLE

R-PSSO-G4

DRAIN

AVALANCHE RATED

MO-235

AEC-Q101; IEC-60134

934066202118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

470 A

700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0069 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

934066009115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

177 A

9 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0121 ohm

44 A

SINGLE

R-PSSO-G4

DRAIN

HIGH RELIABILITY

MO-235

IEC-60134

934064263118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

262 A

74 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0192 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-252

934066492118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

786 A

488 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0038 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

BUK475-200A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

PHB50N03T/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

70 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.021 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

BUK104-50S,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.125 ohm

13 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

BUK555-60H

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

164 A

90 mJ

41 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

175 Cel

SILICON

190 ns

365 ns

.038 ohm

41 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

275 pF

PHW80NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

481 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3

BUK473-100B,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

70 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

PHB34NQ10T/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

170 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

35 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

934056842118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

228 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0136 ohm

66 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

934043660135

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.09 ohm

5.7 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

FAST SWITCHING

BUK466-200A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

76 A

150 mJ

19 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 W

175 Cel

SILICON

90 ns

255 ns

.16 ohm

19 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

100 pF

934055649118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

266 A

230 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

73 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PHD18NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

70 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.09 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.