NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

934066497118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

597 A

385 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0058 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

934056194115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

25 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.15 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

BUK454-60H

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

164 A

100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

125 W

175 Cel

SILICON

120 ns

225 ns

.038 ohm

41 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

275 pF

934057666118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52.4 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

13.1 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

BUK483-60A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

75 ns

170 ns

.1 ohm

3.2 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

160 pF

934043660115

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.09 ohm

5.7 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

FAST SWITCHING

NOT SPECIFIED

NOT SPECIFIED

PHB125N06TT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.008 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

PH16030L

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

38 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

16.9 ohm

38 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL

MO-235

e3

934057114118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

612 A

852 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0066 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

PHP3N40E127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

120 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.5 ohm

2.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-220AB

934066446118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

319 A

43.9 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0079 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

934066873115

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.038 ohm

5 A

DUAL

S-PDSO-N6

DRAIN

IEC-60134

PHP45N03T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

86 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

60 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.024 ohm

45 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTED

TO-220AB

934058023127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

338 A

173 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.011 ohm

75 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

PHP23NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

93 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.07 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BLF7G10L-250,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

56 A

PHP21N06LT,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

69 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

76 A

34 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.075 ohm

19 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

TO-220AB

e3

934064242127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

179 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0079 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

LOGIC LEVEL COMPATIBLE

TO-220AB

934060154315

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3.74 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

.42 ohm

1.87 A

BOTTOM

R-PBCC-N3

DRAIN

934055808127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

170 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

PHB32N06LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

97 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

136 A

100 mJ

34 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.043 ohm

34 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

245

BUK445-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

70 ns

240 ns

.08 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

150 pF

PHX7N40E127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

290 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

3.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FAST SWITCHING

TO-220AB

934064146115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

183 A

21 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.014 ohm

46 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

PHB80N06T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.014 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

934065903118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

397 A

113 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0107 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-252

PHW9N50

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

510 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

8.7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

PHB6N50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

287 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.5 ohm

5.9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

934066876115

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

16 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.058 ohm

4 A

DUAL

S-PDSO-N6

DRAIN

IEC-60134

934056598118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

222 A

300 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE TIN

.03 ohm

55.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

PHB65N06T/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

125 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.018 ohm

63 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

BUK108-50GL,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

54 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.125 ohm

13.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

PHP143NQ04T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

475 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0052 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BLF7G15LS-300P,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

45 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

45 A

PHP66NQ03LT,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

93 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

228 A

90 mJ

57 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0136 ohm

66 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PHP42N03T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

86 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

60 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.026 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTED

TO-220AB

934064268118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

89 A

25 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.064 ohm

22 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-252

PHP87N03LT127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0105 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

TO-220AB

934057945118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

75 A

SINGLE

R-PSSO-G4

DRAIN

PHB7N60E118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

570 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

FAST SWITCHING

934065176118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

824 A

676 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.003 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

PHB10N40T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

43 A

520 mJ

10.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

10.7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

934063914127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

680 A

591 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0041 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

PHB3N50

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14 A

210 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

3.4 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

934056698118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173 A

123 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.027 ohm

43 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

PHP125T/R

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

80 ns

140 ns

.25 ohm

2.5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

PHW20N50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-247

934056875127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

36 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

120 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0054 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.