NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK206-50Y,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.038 ohm

SINGLE

R-PSSO-G4

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

934055640127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

320 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.015 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

934066615184

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

33 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.019 ohm

8.2 A

DUAL

S-PDSO-N6

DRAIN

IEC-60134

BUK454-400B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

80 ns

105 ns

1.8 ohm

4.2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

60 pF

934061644115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

214 A

53 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0125 ohm

63 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

BUK445-400B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

65 ns

205 ns

1 ohm

3.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

70 pF

PHP3N60

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

19 A

290 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

2.2 ohm

4.8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

934055879127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

266 A

330 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.012 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

PMN50XP,165

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

19.4 A

4.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.06 ohm

4.8 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

934063917127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

943 A

555 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0028 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BLF573,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

42 A

934066327118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

797 A

407 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0029 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

IEC-60134

934056787127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

.004 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

934057587118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

179 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.016 ohm

44.7 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

934056265118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

217 A

115 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.021 ohm

54 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PMPB11EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

9 A

1

e3

30

260

PHB130N03LT118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.006 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

PHD3055E/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 A

25 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

10.3 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

934065178118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

680 A

537 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0039 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

BLF7G22L-250P,118

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

65 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

65 A

BUK543-60B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

45 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

25 W

150 Cel

SILICON

150 ns

195 ns

.1 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

160 pF

PHD55N04LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

103 W

PLASTIC/EPOXY

SWITCHING

35 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

60 mJ

55 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.016 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

934055718127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

462 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE TIN

.07 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

934055758118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

116 A

502 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

.063 ohm

29 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

934061157115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

121 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0048 ohm

84 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

934033440135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

23 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.1 ohm

3.2 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

PHT6N06LT,135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

15 mJ

2.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

8.3 W

150 Cel

SILICON

77 ns

76 ns

TIN

.15 ohm

2.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

50 pF

PHB45NQ10T/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

260 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.025 ohm

47 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-220AB

e3

PHT6N03LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23.6 A

60 mJ

5.9 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

175 ns

190 ns

.03 ohm

5.9 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

934064254118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

543 A

271 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0075 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-252

PMPB95ENEA

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

11.2 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.105 ohm

2.8 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934056286118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.024 ohm

47 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BUK109-50GS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

29 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

29 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTION

BUK444-500B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

25 W

150 Cel

SILICON

80 ns

105 ns

2.8 ohm

1.9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

55 pF

BUK565-60A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

156 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

125 W

175 Cel

SILICON

190 ns

365 ns

.042 ohm

39 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

275 pF

BUK105-50SP

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

26 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

29 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

934065169127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

803 A

676 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0035 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

PHP24N03LT127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

15 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.056 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

TO-220AB

PML260SN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

15 A

22 mJ

8.8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.294 ohm

8.8 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

30

260

PHD108NQ03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

187 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

180 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0075 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e3

BUK436W-800B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

3.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

PHB222NQ04LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0035 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

245

BLF7G27LS-75P,118

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

18 A

30

260

BLF7G27LS-140,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

PHP12N50E

NXP Semiconductors

N-CHANNEL

SINGLE

NO

167 W

ENHANCEMENT MODE

1

11.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11.6 A

934063451115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

815 A

290 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0022 ohm

100 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

934064653115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

137 A

37 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.023 ohm

34 A

DUAL

S-PDSO-N5

DRAIN

934064231118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

616 A

242 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0058 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.