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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF7G27LS-140,112 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | BLF7G27LS-140,112 Datasheet |
| In Stock | 4,251 |
| NAME | DESCRIPTION |
|---|---|
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Drain Current (ID): | 28 A |
| Maximum Drain Current (Abs) (ID): | 28 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









