Nexperia Power Field Effect Transistors (FET) 759

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

934071218115

Nexperia

934067474115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

74 A

25 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.071 ohm

18 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

IEC-60134

PMPB07R0UN

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

48 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.009 ohm

11.6 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

195 pF

IEC-60134

PMX100UN

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.7 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.21 ohm

1.3 A

BOTTOM

R-PBCC-N3

12 pF

IEC-60134

PMPB29XPEA

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

22.1 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.038 ohm

5 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

210 pF

AEC-Q101; IEC-60134

GAN039-650NBB

Nexperia

934061327118

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

401 A

215 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

e3

30

245

AEC-Q101; IEC-60134

PXN9R0-30QL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

26 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

90 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0091 ohm

11.4 A

DUAL

R-PDSO-F5

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

57 pF

IEC-60134

934660017115

Nexperia

TIN

1

e3

30

260

AEC-Q101

PXN5R4-30QL

Nexperia

TIN

1

e3

30

260

934067025115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

67 A

8.84 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.059 ohm

16.7 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

AEC-Q101; IEC-60134

934067812115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

211 A

84 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0094 ohm

30 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMPB08R6EN

Nexperia

NICKEL PALLADIUM GOLD

1

e4

30

260

934068622115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

16 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.056 ohm

4 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMPB55ENEAX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

16 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.056 ohm

4 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934070057115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

69 A

8.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.053 ohm

17 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934069905115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

226 A

94.1 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.019 ohm

56 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

934069909115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1163 A

1293 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00169 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

IEC-60134

934660082115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934660084115

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMPB12UNEX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

32 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.016 ohm

7.9 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

934070042115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

58 A

4 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.067 ohm

14 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMPB85ENEA/F

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

12.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.095 ohm

3 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067786115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1284 A

578 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0014 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

IEC-60134

934070082115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

258 A

42.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0091 ohm

64 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMPB13XNEA

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMPB25ENE

Nexperia

TIN

1

30

260

934070074115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

358 A

79.2 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0052 ohm

70 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934070089115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

77 A

4.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.045 ohm

19 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMPB16EP

Nexperia

TIN

1

e3

30

260

PMPB10XNEA

Nexperia

TIN

1

e3

30

260

AEC-Q101

934068839115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

32 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.016 ohm

7.9 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

PMPB10UP

Nexperia

TIN

1

e3

30

260

PXP6R1-30QL

Nexperia

TIN

1

e3

30

260

934067972115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

230 A

28.3 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0076 ohm

57 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

IEC-60134

934070055115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

86 A

11.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.042 ohm

22 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067945115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

51 A

19.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0825 ohm

13 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMV37ENE

Nexperia

TIN

1

e3

30

260

GAN039-650NTB

Nexperia

934660019115

Nexperia

TIN

1

e3

30

260

AEC-Q101

PXN6R2-25QL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40.3 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

90 A

30 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0062 ohm

13.1 A

DUAL

R-PDSO-F8

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

76 pF

IEC-60134

934067954115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

71 A

11.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.045 ohm

15.4 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934069916115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

405 A

106.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00372 ohm

70 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

IEC-60134

PXN6R7-30QL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40.3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

87 A

34.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0067 ohm

12.7 A

DUAL

R-PDSO-F8

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

66 pF

IEC-60134

934058815518

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

50 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.0125 ohm

20.3 A

DUAL

R-PDSO-G8

2

LOGIC LEVEL COMPATIBLE

MS-012AA

e4

30

260

934067423115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

156 A

43.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.025 ohm

39 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

AEC-Q101; IEC-60134

934067435115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

102 A

8.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.029 ohm

26 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

AEC-Q101; IEC-60134

934067045115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

516 A

100 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0044 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

AEC-Q101; IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.