Nexperia Power Field Effect Transistors (FET) 759

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN2R8-80SSF

Nexperia

PSMN013-60HL

Nexperia

TIN

1

e3

30

260

BUK7S1R2-40H/A002

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN8R0-40HL

Nexperia

TIN

1

e3

30

260

PSMN013-60HS

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

213 A

82 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.01 ohm

40 A

DUAL

R-PDSO-X8

1

DRAIN

HIGH RELIABILITY

e3

30

260

196 pF

IEC-60134

PSMN045-100HL

Nexperia

TIN

1

e3

30

260

PSMN012-60HL

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

190 A

82 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0125 ohm

40 A

DUAL

R-PDSO-X8

1

DRAIN

HIGH RELIABILITY

e3

30

260

159 pF

IEC-60134

PSMN014-40HLD

Nexperia

TIN

1

e3

30

260

PSMN8R5-40HS

Nexperia

TIN

1

e3

30

260

PSMN025-100HS

Nexperia

TIN

1

e3

30

260

PSMN011-60HL

Nexperia

TIN

1

e3

30

260

PSMN9R3-60HS

Nexperia

TIN

1

e3

30

260

PSMN038-100HS

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

84 A

46 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0376 ohm

21.4 A

DUAL

R-PDSO-X8

1

DRAIN

e3

30

260

115 pF

IEC-60134

PSMN014-60HS

Nexperia

TIN

1

e3

30

260

PSMN1R0-30YLE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

275 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1303 A

1500 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00155 ohm

275 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

732 pF

IEC-60134

PSMN6R1-40HL

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

265 A

125 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0072 ohm

40 A

DUAL

R-PDSO-X8

1

DRAIN

HIGH RELIABILITY

202 pF

IEC-60134

PSMN2R1-30YLE

Nexperia

TIN

1

e3

30

260

PSMN1R6-25YLE

Nexperia

TIN

1

e3

30

260

PSMN029-100HL

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

118 A

83 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.029 ohm

30 A

DUAL

R-PDSO-X8

1

DRAIN

145 pF

IEC-60134

PSMN1R1-30YLE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

192 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1142 A

1000 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0018 ohm

265 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

710 pF

IEC-60134

PSMNR98-25YLE

Nexperia

TIN

1

e3

30

260

PSMN6R8-40HS

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

276 A

130 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0068 ohm

40 A

DUAL

R-PDSO-X8

1

DRAIN

HIGH RELIABILITY

e3

30

260

270 pF

IEC-60134

PSMN033-100HL

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

106 A

74 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.033 ohm

26 A

DUAL

R-PDSO-X8

1

DRAIN

e3

30

260

139 pF

IEC-60134

PSMN028-100HS

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

116 A

67 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0275 ohm

29 A

DUAL

R-PDSO-X8

DRAIN

150 pF

IEC-60134

PSMNR89-25YLE

Nexperia

1

PSMN2R5-80SSE

Nexperia

PSMN1R0-40YLD/1X

Nexperia

Tin (Sn)

1

e3

BUK7Y59-60E/DMANX

Nexperia

Tin (Sn)

1

e3

BUK9Y7R6-40E/DMANX

Nexperia

Tin (Sn)

1

e3

PSMNR68-25YLE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

268 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1677 A

3700 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.001 ohm

285 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

1082 pF

IEC-60134

BUK9Y12-55B/C3X

Nexperia

PSMN1R0-25YLD/1X

Nexperia

Tin (Sn)

1

e3

BUK9Y3R0-40E/DMANX

Nexperia

Tin (Sn)

1

e3

PSMNR56-25YLE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2068 A

7200 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00092 ohm

320 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

1625 pF

IEC-60134

PSMN0R7-25YLD/1X

Nexperia

Tin (Sn)

1

e3

PMV41XPA

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7 W

PLASTIC/EPOXY

SWITCHING

28 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

38 A

17.5 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.05 ohm

4 A

DUAL

R-PDSO-G3

TO-236AB

77 pF

AEC-Q101; IEC-60134

PSMN1R3-80SSF

Nexperia

PSMNR90-40YSN

Nexperia

PSMN2R6-80YSF

Nexperia

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.