Nexperia - BUK9Y12-55B/C3X

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BUK9Y12-55B/C3X by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BUK9Y12-55B/C3X
Description Power Field-Effect Transistors;
Datasheet BUK9Y12-55B/C3X Datasheet
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IRLML0060TRPBF by International Rectifier

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Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
BSC030P03NS3GAUMA1 by Infineon Technologies

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IRF640 by STMicroelectronics

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FDS4559_F085 by Fairchild Semiconductor

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2N7000 by North American Philips Discrete Products Div

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IRF7304TRPBF by Infineon Technologies

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