Nexperia Power Field Effect Transistors (FET) 759

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK9V13-40H

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

46 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

169 A

10.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0169 ohm

42 A

DUAL

R-PDSO-X8

1

HIGH RELIABILITY

e3

30

260

84 pF

AEC-Q101; IEC-60134

PSMN2R0-40YLD

Nexperia

TIN

1

e3

30

260

PSMN018-100PSFQ

Nexperia

TIN

e3

PSMN2R8-40YSDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

658 A

452 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0028 ohm

160 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

MO-235

e3

30

260

337 pF

IEC-60134

BUK6D38-30E

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

19 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

68 A

10 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.038 ohm

17 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

42 pF

AEC-Q101; IEC-60134

PSMN3R2-40YLD

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

537 A

243 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0042 ohm

120 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

MO-235

e3

30

260

238 pF

IEC-60134

BUK7Y3R5-40HX

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN1R0-40SSH

Nexperia

TIN

1

e3

30

260

BUK6D72-30E

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9M20-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9K30-80EX

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9M19-60EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

152 A

30 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.019 ohm

38 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K25-40RA

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN018-100ESF

Nexperia

TIN

e3

BUK9K52-60RA

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMV164ENE

Nexperia

BUK78150-55A/CUF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

25 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.15 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN1R8-30MLHX

Nexperia

TIN

1

e3

30

260

BUK6D210-60E

Nexperia

TIN

1

e3

30

260

BUK9832-55A/CU

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

47 A

100 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.036 ohm

12 A

DUAL

R-PDSO-G4

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

AEC-Q101; IEC-60134

BUK9D23-40E

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7K45-100EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

84 A

46 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0376 ohm

21.4 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7D36-60E

Nexperia

TIN

1

e3

30

260

PSMN1R1-50SLH

Nexperia

3

20

240

BUK6Y33-60P

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

85 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.033 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

118 pF

AEC-Q101; IEC-60134

PSMN3R2-40YLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

537 A

243 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0042 ohm

120 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

MO-235

e3

30

260

238 pF

IEC-60134

PSMN5R0-40MSH

Nexperia

TIN

1

e3

30

260

PSMN012-100YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

339 A

139 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.012 ohm

85 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

PMV240SP

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.3 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

24 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.365 ohm

1.2 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

15 pF

IEC-60134

PSMN015-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

168 A

62 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0179 ohm

42 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

10.6 pF

IEC-60134

BUK7Y7R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN7R2-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

194 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

432 A

164 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0097 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

22.8 pF

IEC-60134

BUK9Y2R4-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMNR90-40SSH

Nexperia

TIN

1

e3

30

260

PSMNR60-25YLH

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

268 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1758 A

3200 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00102 ohm

300 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

1478 pF

IEC-60134

BUK6D56-60E

Nexperia

TIN

1

e3

30

260

BUK9Y6R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN3R9-100YSF

Nexperia

TIN

1

e3

30

260

BUK9K5R6-30EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

305 A

169 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0058 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN1R4-30YLD/S50X

Nexperia

PSMN4R5-80YSF

Nexperia

TIN

1

e3

30

260

BUK7M11-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMV15ENE

Nexperia

TIN

1

e3

30

260

PSMNR51-25YLH

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2174 A

6300 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00082 ohm

380 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

1548 pF

IEC-60134

BUK7Y3R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN6R7-40MLD

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

282 A

58 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0067 ohm

50 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

e3

30

260

132 pF

IEC-60134

PSMN012-60MSX

Nexperia

TIN

1

30

260

PSMN2R0-30YLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

793 A

397 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0025 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.