Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nexperia |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
46 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
169 A |
10.6 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0169 ohm |
42 A |
DUAL |
R-PDSO-X8 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
84 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
147 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
658 A |
452 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0028 ohm |
160 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
MO-235 |
e3 |
30 |
260 |
337 pF |
IEC-60134 |
||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
68 A |
10 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.038 ohm |
17 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e3 |
30 |
260 |
42 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
115 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
537 A |
243 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0042 ohm |
120 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
MO-235 |
e3 |
30 |
260 |
238 pF |
IEC-60134 |
||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
152 A |
30 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.019 ohm |
38 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
Nexperia |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
25 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.15 ohm |
5.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
47 A |
100 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.036 ohm |
12 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
84 A |
46 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0376 ohm |
21.4 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
3 |
20 |
240 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
110 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
85 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.033 ohm |
30 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
MO-235 |
e3 |
30 |
260 |
118 pF |
AEC-Q101; IEC-60134 |
|||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
115 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
537 A |
243 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0042 ohm |
120 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
MO-235 |
e3 |
30 |
260 |
238 pF |
IEC-60134 |
||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
339 A |
139 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.012 ohm |
85 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
MO-235 |
e3 |
30 |
260 |
IEC-60134 |
||||||||||||||||||||
|
Nexperia |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
8.3 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 A |
24 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.365 ohm |
1.2 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
15 pF |
IEC-60134 |
||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
104 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
168 A |
62 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0179 ohm |
42 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
MO-235 |
e3 |
30 |
260 |
10.6 pF |
IEC-60134 |
||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
194 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
432 A |
164 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0097 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
22.8 pF |
IEC-60134 |
|||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
268 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1758 A |
3200 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.00102 ohm |
300 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY |
MO-235 |
e3 |
30 |
260 |
1478 pF |
IEC-60134 |
||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
305 A |
169 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0058 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
Nexperia |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
333 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2174 A |
6300 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.00082 ohm |
380 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
1548 pF |
IEC-60134 |
|||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
282 A |
58 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0067 ohm |
50 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
e3 |
30 |
260 |
132 pF |
IEC-60134 |
|||||||||||||||||
|
Nexperia |
TIN |
1 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
793 A |
397 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0025 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY |
MO-235 |
e3 |
30 |
260 |
IEC-60134 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.