Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
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|
Nexperia |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
35 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.015 ohm |
8.8 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
e4 |
139 pF |
IEC-60134 |
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Nexperia |
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Nexperia |
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Nexperia |
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Nexperia |
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Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
10 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
16 A |
6.2 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.072 ohm |
3.8 A |
DUAL |
S-PDSO-N6 |
DRAIN |
23 pF |
AEC-Q101; IEC-60134 |
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Nexperia |
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Nexperia |
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Nexperia |
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Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
38 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.013 ohm |
9.5 A |
DUAL |
S-PDSO-N6 |
DRAIN |
119 pF |
IEC-60134 |
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|
Nexperia |
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|
Nexperia |
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|
Nexperia |
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|
Nexperia |
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Nexperia |
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Nexperia |
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Nexperia |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
341 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1038 A |
663 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0034 ohm |
240 A |
SINGLE |
R-PSSO-G4 |
3 |
DRAIN |
AVALANCHE RATED |
20 |
260 |
260 pF |
IEC-60134 |
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Nexperia |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
106 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
252 A |
5.8 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.015 ohm |
63 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235 |
199 pF |
AEC-Q101; IEC-60134 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
15 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.15 ohm |
5.5 A |
DUAL |
R-PDSO-G4 |
DRAIN |
AEC-Q101; IEC-60134 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
235 A |
51.3 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0103 ohm |
60 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
IEC-60134 |
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Nexperia |
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|
Nexperia |
NOT SPECIFIED |
NOT SPECIFIED |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
147 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
658 A |
452 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0028 ohm |
160 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
MO-235 |
e3 |
30 |
260 |
337 pF |
IEC-60134 |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1226 A |
1762 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.00143 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY |
MO-235 |
e3 |
30 |
260 |
IEC-60134 |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
333 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1049 A |
745 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0024 ohm |
200 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
542 pF |
IEC-60134 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
212 A |
42.7 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.015 ohm |
53 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
MO-235 |
e3 |
30 |
260 |
IEC-60134 |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
147 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
244 A |
107.8 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0114 ohm |
61 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
AVALANCHE RATED |
MO-235 |
16 pF |
IEC-60134 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
38 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
90 A |
19.5 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.035 ohm |
22 A |
DUAL |
R-PDSO-X6 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
70 pF |
AEC-Q101; IEC-60134 |
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Nexperia |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
148 A |
13.7 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.017 ohm |
37 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
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|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
238 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
554 A |
232 mJ |
120 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0055 ohm |
120 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
AVALANCHE RATED |
MO-235 |
17 pF |
IEC-60134 |
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|
Nexperia |
TIN |
1 |
30 |
260 |
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Nexperia |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
66 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
91 A |
3.9 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.057 ohm |
23 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235 |
56 pF |
AEC-Q101; IEC-60134 |
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Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
30 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.08 ohm |
3.5 A |
DUAL |
R-PDSO-G4 |
DRAIN |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
358 A |
79.2 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0052 ohm |
70 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
110 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
80 mJ |
80 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.01 ohm |
80 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
MO-235 |
e3 |
30 |
260 |
270 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
77 A |
4.6 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.045 ohm |
19 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.