Nexperia Power Field Effect Transistors (FET) 759

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK7Y1R4-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN8R9-100BSE

Nexperia

TIN

1

e3

30

245

BUK6D77-60E

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7S2R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7M8R0-40EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

276 A

39.9 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.008 ohm

69 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7S1R2-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN2R5-40YLD

Nexperia

TIN

1

e3

30

260

BUK6D120-40E

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN2R2-40YSDX

Nexperia

TIN

e3

BUK7S0R7-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9M43-100EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

103 A

42.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.044 ohm

26 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K12-60EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

204 A

118 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0115 ohm

35 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN5R3-25MLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

285 A

76.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00849 ohm

70 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

IEC-60134

BUK6D30-40EX

Nexperia

TIN

1

e3

30

260

PSMN4R2-40VSH

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

393 A

42.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0042 ohm

98 A

DUAL

R-PDSO-X8

1

DRAIN SOURCE

e3

30

260

200 pF

IEC-60134

PSMN8R5-100ESF

Nexperia

TIN

e3

BUK9M9R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMV15ENEA

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

17.4 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.02 ohm

6.2 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

75 pF

AEC-Q101; IEC-60134

PSMN8R7-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

198 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

234 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.009 ohm

90 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

17 pF

IEC-60134

BUK9K22-80EX

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN012-60MS

Nexperia

TIN

1

e3

30

260

PSMN7R5-30MLD/S50X

Nexperia

PSMNR90-40YLH

Nexperia

TIN

1

e3

30

260

BUK7K18-40EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

127 A

26.3 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.019 ohm

24.2 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN1R5-25MLHX

Nexperia

TIN

1

e3

30

260

PSMN2R0-60PSRQ

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

338 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1135 A

913 mJ

120 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

147 ns

-55 Cel

247 ns

.0022 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

HIGH RELIABILITY

TO-220AB

835 pF

IEC-60134

PSMN0R7-25YLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1482 A

174 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00092 ohm

300 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

IEC-60134

BUK7880-55/CUF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

30 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

7.5 A

DUAL

R-PDSO-G4

DRAIN

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101; IEC-60134

BUK7D25-40E

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9M5R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMNR60-25YLHX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

268 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1758 A

3200 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00102 ohm

300 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

1478 pF

IEC-60134

BUK7S0R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7Y25-80E,115

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

156 A

43.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.025 ohm

39 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

AEC-Q101; IEC-60134

PSMN041-100MSE

Nexperia

BUK9Y8R8-60EL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

194 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

493 A

195 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0086 ohm

110 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

307 pF

AEC-Q101; IEC-60134

PSMN071-100NSE

Nexperia

BUK9Y22-60EL

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9M67-60EL

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMNR67-30YLE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2070 A

4.9 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.001 ohm

365 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

1044 pF

IEC-60134

BUK9M31-60EL

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9Y7R0-60EL

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9Y13-60EL

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMNR82-30YLE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

268 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1667 A

2.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00125 ohm

330 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

823 pF

IEC-60134

BUK9M20-60EL

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9Y8R8-60ELX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

194 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

493 A

195 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0086 ohm

110 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

307 pF

AEC-Q101; IEC-60134

PSMN2R9-100SSE

Nexperia

TIN

1

e3

30

260

PSMN072-100MSE

Nexperia

TIN

1

e3

30

260

PSMN1R4-40YSH

Nexperia

TIN

1

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.