Nexperia Power Field Effect Transistors (FET) 759

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK9K13-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN1R5-40YSD

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1145 A

426 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0015 ohm

202 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY, AVALANCHE RATED

MO-235

e3

30

260

513 pF

IEC-60134

BUK98180-100A/CU

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BUK6Y24-40P

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

155 A

54 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.024 ohm

39 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

100 pF

AEC-Q101; IEC-60134

PSMN3R7-100BSE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

405 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

780 A

542 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

157 ns

-55 Cel

251 ns

TIN

.00395 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

494 pF

IEC-60134

BUK9M23-80EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

148 A

55.4 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.023 ohm

37 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN3R3-40MSH

Nexperia

TIN

1

e3

30

260

BUK6Y24-40PX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

155 A

54 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.024 ohm

39 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

100 pF

AEC-Q101; IEC-60134

PSMN8R5-40MLD

Nexperia

TIN

1

e3

30

260

PSMN8R5-100PSF

Nexperia

TIN

e3

BUK7M8R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN1R2-55SLH

Nexperia

3

20

240

PSMN1R6-30MLH

Nexperia

TIN

1

e3

30

260

PSMN1R0-40YSHX

Nexperia

TIN

1

30

260

BUK9M3R3-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7M9R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7K15-80E

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

80 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

92 A

133 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.015 ohm

23 A

DUAL

R-PDSO-X6

1

DRAIN

AVALANCHE RATED

e3

30

260

158 pF

AEC-Q101; IEC-60134

PSMN1R7-25YLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

860 A

746 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00242 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

IEC-60134

BUK7M6R7-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN4R3-40MSH

Nexperia

TIN

1

e3

30

260

PSMN1R6-30MLH/S500

Nexperia

BUK7S1R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN6R4-30MLDX

Nexperia

TIN

1

e3

30

260

BUK6D120-60P

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK6Y25-40P

Nexperia

BUK7J1R0-40H

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

600 A

242 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.001 ohm

220 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9M6R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN3R5-40YSD

Nexperia

TIN

1

e3

30

260

BUK9C10-55BIT/A,11

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

401 A

215 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

75 A

SINGLE

R-PSSO-G6

DRAIN

AEC-Q101; IEC-60134

BUK7Y2R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9K20-80E

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9M4R3-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMV28ENEA

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

10 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.037 ohm

4.4 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

42 pF

AEC-Q101; IEC-60134

BUK7M22-80EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

147 A

36.9 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.022 ohm

37 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN3R3-40MLHX

Nexperia

TIN

1

30

260

BUK7J1R4-40H

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

395 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

600 A

154 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0014 ohm

190 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

524 pF

AEC-Q101; IEC-60134

PSMN1R5-50YLH

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1161 A

2000 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.002 ohm

200 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

497 pF

IEC-60134

BUK9K22-80E

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN8R5-100ESFQ

Nexperia

PSMN3R5-25MLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

405 A

106.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00372 ohm

70 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

IEC-60134

BUK7M21-40EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

131 A

11.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.021 ohm

33 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9M8R5-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK6D125-60E

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK6Y19-30PX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

181 A

57 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.019 ohm

45 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

150 pF

AEC-Q101; IEC-60134

PSMN3R3-40MSHX

Nexperia

TIN

1

30

260

PSMN013-40VLD

Nexperia

TIN

1

e3

30

260

PSMNR51-25YLHX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2174 A

6300 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00082 ohm

380 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

1548 pF

IEC-60134

BUK7K23-80E

Nexperia

TIN

1

e3

30

260

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.