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| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | BUK9C10-55BIT/A,11 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSSO-G6; Terminal Position: SINGLE; |
| Datasheet | BUK9C10-55BIT/A,11 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 215 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 75 A |
| Maximum Pulsed Drain Current (IDM): | 401 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 55 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | AEC-Q101; IEC-60134 |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .015 ohm |
