Nexperia - PSMN8R5-100ESFQ

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PSMN8R5-100ESFQ by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PSMN8R5-100ESFQ
Description Power Field-Effect Transistors;
Datasheet PSMN8R5-100ESFQ Datasheet
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2N7002 by Sipex

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
IRLML0030TRPBF by International Rectifier

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IRF3205LPBF by International Rectifier

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IRFR5305TRPBF by International Rectifier

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
FQD3P50TM by Fairchild Semiconductor

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IRF640 by STMicroelectronics

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
FDMS86300DC by Onsemi

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FQD12N20LTM by Fairchild Semiconductor

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Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Minimum DS Breakdown Voltage: 200 V; Terminal Form: GULL WING;
BSC160N15NS5ATMA1 by Infineon Technologies

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FDS4559 by Fairchild Semiconductor

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Infineon Technologies

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International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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International Rectifier

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