Nexperia Power Field Effect Transistors (FET) 759

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK9M85-60EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

51 A

4.55 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.085 ohm

12.8 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK6D43-40PX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

56 A

29.7 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.043 ohm

14 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

91 pF

AEC-Q101; IEC-60134

PMPB27EPAX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

25 A

26.8 mJ

6.1 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.029 ohm

6.1 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

150 pF

AEC-Q101; IEC-60134

PMV100EPAR

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

33 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Tin (Sn)

.13 ohm

2.2 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

26 pF

AEC-Q101; IEC-60134

PMPB15XPAX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

33 A

23.9 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.02 ohm

8.2 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BSH103BKR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.27 ohm

1 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

7.6 pF

IEC-60134

BUK9875-100A/CUX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

49 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.084 ohm

7 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMV20XNEAR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.94 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.02 ohm

6.3 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

144 pF

AEC-Q101; IEC-60134

PMPB43XPEAX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.048 ohm

5 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7D25-40EX

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9M34-100EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

114 A

57.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.034 ohm

29 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN5R6-60YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

405 A

88.2 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0072 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

BUK7K134-100EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

39 A

10.9 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.121 ohm

9.8 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7K32-100EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

116 A

67 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0275 ohm

29 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMV240SPR

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.3 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

24 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.365 ohm

1.2 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

15 pF

IEC-60134

PSMN5R2-60YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

479 A

127 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.006 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

PSMN021-100YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

197 A

80.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.022 ohm

49 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

BUK7K15-80EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

80 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

92 A

133 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.015 ohm

23 A

DUAL

R-PDSO-X6

1

DRAIN

e3

30

260

158 pF

AEC-Q101; IEC-60134

BUK9K13-60EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

190 A

82 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0125 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9M24-60EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

127 A

23.9 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.024 ohm

32 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMV16XNR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.94 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.02 ohm

6.8 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

125 pF

IEC-60134

PSMN1R4-40YLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1201 A

446 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00185 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

IEC-60134

BUK98150-55A/CU,135

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

22 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.161 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMV20XNER

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.94 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.023 ohm

5.7 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

85 pF

IEC-60134

BUK9M24-40EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

121 A

12.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.024 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9D23-40EX

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK9880-55A/CUX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

36 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.089 ohm

7 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK6D43-60EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

24 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.043 ohm

13 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN015-100YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

274 A

110 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

69 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

BUK9Y1R6-40HX

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMPB85ENEAX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

12.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.095 ohm

3 A

DUAL

S-PDSO-N6

1

DRAIN

30

260

AEC-Q101; IEC-60134

BUK9Y1R9-40HX

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7K23-80EX

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN4R1-60YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

593 A

199 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0048 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

BUK9M120-100EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

13.2 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.12 ohm

11.5 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN010-80YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

336 A

112.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.011 ohm

84 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

PSMN014-80YLX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

79.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

62 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

BUK6Y33-60PX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

85 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.033 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

118 pF

AEC-Q101; IEC-60134

BUK9M35-80EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

106 A

32.3 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.035 ohm

26 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9Y2R4-40HX

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN1R2-30YLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1181 A

961 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0016 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

IEC-60134

BUK6Y14-40PX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

257 A

94 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.014 ohm

64 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

183 pF

AEC-Q101; IEC-60134

NX6008NBKR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2.8 ohm

.27 A

DUAL

R-PDSO-G3

TO-236AB

1.9 pF

IEC-60134

PSMN5R4-25YLDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

75.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00569 ohm

70 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

MO-235

e3

30

260

IEC-60134

BUK7K12-60EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

228 A

103 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0093 ohm

40 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

BUK7K13-60EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

213 A

82 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K17-60EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

148 A

64 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.017 ohm

26 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9M15-60EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

39 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

47 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.