Image shown is a representation only.
| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | BUK9M24-40EX |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | BUK9M24-40EX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 30 A |
| Maximum Pulsed Drain Current (IDM): | 121 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .024 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 12.6 mJ |
| Other Names: |
BUK9M24-40E,115 568-13020-1 568-13020-2 5202-BUK9M24-40EXTR 568-13020-6 NEXNEXBUK9M24-40EX 568-13020-2-ND BUK9M24-40EX-ND 568-13020-1-ND 2156-BUK9M24-40EX-NEX 1727-2576-2 1727-2576-1 934070088115 1727-2576-6 568-13020-6-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101; IEC-60134 |
| Peak Reflow Temperature (C): | 260 |









