Nexperia Power Field Effect Transistors (FET) 759

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN7R8-100PSEQ

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

473 A

315 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0078 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IEC-60134

PSMNR58-30YLH

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1960 A

4300 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0009 ohm

380 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

1392 pF

IEC-60134

PSMN0R9-30ULD

Nexperia

TIN

1

e3

30

260

BUK9M11-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7S1R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN1R0-40YSH

Nexperia

TIN

1

e3

30

260

BUK6D43-40P

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

56 A

29.7 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.043 ohm

14 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

91 pF

AEC-Q101; IEC-60134

PSMN1R7-40YLD

Nexperia

TIN

1

e3

PSMN1R8-30MLH

Nexperia

TIN

1

e3

30

260

BUK6Y14-40P

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

257 A

94 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.014 ohm

64 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

183 pF

AEC-Q101; IEC-60134

PSMN1R9-40YSDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

194 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

919 A

905 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0019 ohm

200 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

MO-235

e3

30

260

414 pF

IEC-60134

PSMN2R6-100SSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

341 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

955 A

578 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0039 ohm

200 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

126 pF

IEC-60134

BUK7S0R9-40H

Nexperia

TIN

e3

BUK6D385-100E

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN0R9-25YLC,215

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1133 A

342 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00125 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

PSMN047-100NSE

Nexperia

BUK9M11-40EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

211 A

32.4 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.011 ohm

53 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K5R1-30EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

329 A

214 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0053 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9Y2R8-40H

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

172 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

600 A

50 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0039 ohm

120 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

246 pF

AEC-Q101; IEC-60134

BUK7S2R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK6Y19-30P

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

181 A

57 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.019 ohm

45 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

150 pF

AEC-Q101; IEC-60134

BUK9M10-30EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

216 A

28.3 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

54 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK78150-55A/CU,135

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

25 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.15 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7Y3R0-40HX

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7M20-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN3R5-80YSF

Nexperia

TIN

1

e3

30

260

PSMN2R5-40YLDX

Nexperia

TIN

1

e3

30

260

BUK7Y3R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMNR70-30YLH

Nexperia

TIN

1

e3

30

260

PSMN3R3-100SSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

341 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

848 A

478 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.005 ohm

180 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

107 pF

IEC-60134

BUK9M6R7-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7M6R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN1R8-80SSF

Nexperia

3

20

260

2N7002H

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.6 ohm

.36 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

TO-236AB

4 pF

AEC-Q101; IEC-60134

BUK9Y1R3-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMNR70-40SSH

Nexperia

TIN

1

e3

30

260

BUK78150-55A/CU

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

25 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.15 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN8R5-40MSD

Nexperia

TIN

1

e3

30

260

BUK9M53-60EX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

69 A

8.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.053 ohm

17 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN3R3-40MLH

Nexperia

TIN

1

e3

30

260

PSMN6R9-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

321 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0102 ohm

90 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

19 pF

IEC-60134

BUK7M3R3-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN1R4-30YLD/S500

Nexperia

TIN

1

e3

30

260

BUK7M5R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BUK7Y1R7-40H

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

294 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

600 A

158 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0017 ohm

120 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

393 pF

AEC-Q101; IEC-60134

BUK7Y2R0-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

PSMN012-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

129 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

212 A

88 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0135 ohm

53 A

SINGLE

R-PSSO-G4

DRAIN

AVALANCHE RATED

MO-235

14 pF

IEC-60134

BUK7J1R4-40HX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

395 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

600 A

253 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0014 ohm

120 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

524 pF

AEC-Q101; IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.