BUK9M53-60EX by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	BUK9M53-60EX
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 69 A;
Datasheet	BUK9M53-60EX Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	17 A
Maximum Pulsed Drain Current (IDM):	69 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.053 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	8.7 mJ
Other Names:	934070057115 BUK9M53-60E,115 568-13027-1-ND 5202-BUK9M53-60EXTR 568-13027-2-ND 568-13027-6-ND 1727-2583-6 568-13027-1 568-13027-2 BUK9M53-60EX-ND 1727-2583-2 568-13027-6 1727-2583-1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

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