Nexperia - BUK9K5R6-30EX

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BUK9K5R6-30EX by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BUK9K5R6-30EX
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 40 A;
Datasheet BUK9K5R6-30EX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 305 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0058 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 169 mJ
Other Names: 1727-2469-2
568-12854-2
5202-BUK9K5R6-30EXTR
568-12854-1
BUK9K5R6-30EX-ND
1727-2469-1
568-12854-1-ND
1727-2469-6
568-12854-6
568-12854-2-ND
934068327115
568-12854-6-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
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