Nexperia - PSMN028-100HS

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PSMN028-100HS by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PSMN028-100HS
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64 W; Maximum Feedback Capacitance (Crss): 150 pF; No. of Elements: 2;
Datasheet PSMN028-100HS Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 29 A
Maximum Pulsed Drain Current (IDM): 116 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 64 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-X8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0275 ohm
Avalanche Energy Rating (EAS): 67 mJ
Maximum Feedback Capacitance (Crss): 150 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: IEC-60134
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