Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

UPA1764G(0)-E2-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

NP48N055CHE-S12-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

100 mJ

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.017 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

UPA1708G-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

2SJ505L-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.036 ohm

50 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e6

HAT3008RJ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.084 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

2SJ529S

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

RJE0603JPE-00-J3

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP80N04EHE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

169 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.008 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

H5N2519P-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

195 A

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN COPPER

.035 ohm

65 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

2SK738Z

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

NP84N04KHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

ENHANCEMENT MODE

1

84 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

84 A

UPA2782GR-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

H7N0310LSTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.019 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA1874GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

HAF2012(S)-(1)

Renesas Electronics

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

H5N3011P-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

176 A

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.048 ohm

88 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

HAT2165N-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

55 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

UPA2351T1P-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-B4

Not Qualified

e6

UPA2700GR-E1-AT

Renesas Electronics

MATTE TIN

e3

260

HAT2137H-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

45 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.006 ohm

45 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

20

260

NP22N055SHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

22 A

NP89N04PUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

RJK2006DPJ-00#T3

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

NP32N055HDE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

2SJ186CYTL-E

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

12 ohm

.5 A

SINGLE

R-PSSO-F3

1

Not Qualified

e6

H5N5006LM

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14 A

3.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 ohm

3.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NP40N10VDF-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

61 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.037 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

2SJ551S-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.11 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

UPA2750GR-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

9 A

e6

NP160N04TUJ-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

160 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.002 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HAF2006R

Renesas Electronics

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

8

SMALL OUTLINE

.24 ohm

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

2SJ181STL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

25 ohm

.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

FS50SM-3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.031 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP90N055VUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

FX6ASJ-2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.72 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK611

Renesas Electronics

N-CHANNEL

SINGLE

NO

10 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

1 A

e0

2SJ546

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.155 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

NP80N03ELE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

400 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP82N06ELD

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

174 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

210 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.012 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NP86N04MHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

344 A

450 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0044 ohm

86 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

UPA2708TP-E2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

34 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

28.9 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

40 A

DUAL

R-PDSO-G8

1

Not Qualified

2SJ132-Z

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.6 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e0

UPA2708GR-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.5 W

1

17 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

17 A

e3

260

HAT2170H-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

45 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.005 ohm

45 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e4

20

260

2SJ527S

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.8 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

FS30SM-5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

UPA2753GR

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

32 A

6.4 mJ

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0364 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e0

HAT1055R-EL-E

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.13 ohm

5 A

DUAL

R-PDSO-G8

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.