Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

RJK0651DPB-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

11.7 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.018 ohm

25 A

SINGLE

R-PSSO-G4

DRAIN

e4

100 pF

RJK0651DPB-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

11.7 mJ

25 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.018 ohm

25 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

e4

100 pF

RJK0305DPB-02#J0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.013 ohm

30 A

SINGLE

R-PSSO-G4

DRAIN

NP100P06PDG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

420 mJ

100 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

2SK1971

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.23 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK1317-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

12 ohm

2.5 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

2SK1971-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.23 ohm

35 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

RJK0305DPB-00#J0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.013 ohm

30 A

SINGLE

R-PSSO-G4

DRAIN

NOT SPECIFIED

NOT SPECIFIED

RJK0305DPB-00-J0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.013 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

260

2SK2225-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

12 ohm

2 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

e2

NP100P06PLG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

420 mJ

100 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0078 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

2SJ649-AZ

Renesas Electronics

P-CHANNEL

SINGLE

NO

25 W

1

20 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

10

260

RJK0656DPB-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0056 ohm

40 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK0656DPB-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

12 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0056 ohm

40 A

SINGLE

R-PSSO-G4

DRAIN

NOT SPECIFIED

NOT SPECIFIED

NP50P04SDG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

84 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

136 mJ

50 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

1.2 W

175 Cel

SILICON

MATTE TIN

.015 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

e3

420 pF

AEC-Q101

2SK1058

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

160 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

NP15P06SLG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

19 mJ

15 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.095 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e3

NP36P06KDG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

54 mJ

36 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0375 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

2SK2586

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.016 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

NP36P04SDG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

67 mJ

36 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

1.2 W

175 Cel

SILICON

.0235 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

280 pF

AEC-Q101

2SK1169

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.25 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

RJK0330DPB-00-J0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

45 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0039 ohm

45 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

20

260

RJK0330DPB-01-J0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

45 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0039 ohm

45 A

SINGLE

R-PSSO-G4

DRAIN

2SK1518-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.27 ohm

20 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

NP50P06KDG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

106 mJ

50 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.023 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP80N06PLG-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0083 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

2SJ605-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

203 mJ

65 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.031 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

10

260

FK10UM-10

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.13 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

RJK0328DPB-01-J0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0029 ohm

60 A

SINGLE

R-PSSO-G4

DRAIN

2SK2586-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

174 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.016 ohm

60 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

RBA250N10CHPF-4UA02#GB0

Renesas Electronics

2SK4145-S19-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

215 A

102 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.01 ohm

84 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

RJK1576DPA-00#J5A

Renesas Electronics

N-CHANNEL

SINGLE

YES

65 W

150 V

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.058 ohm

25 A

NOT SPECIFIED

NOT SPECIFIED

2SK1170-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.27 ohm

20 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

2SK1959-T1-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK2225-80-E#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

12 ohm

2 A

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FX50SMJ-2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.061 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NP100P04PDG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

550 mJ

100 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0051 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP100P06PLG-E2-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

420 mJ

100 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP40N055MLE-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.032 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NP60N04KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP88N075KUE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

352 A

450 mJ

88 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0085 ohm

88 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

RJK1055DPB-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

92 A

23 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.017 ohm

23 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

e4

RJK1055DPB-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

92 A

23 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.017 ohm

23 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

e4

RJK1056DPB-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

6.3 mJ

25 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.014 ohm

25 A

DUAL

R-PDSO-X5

DRAIN

Not Qualified

e4

120 pF

RJK1056DPB-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

6.3 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.014 ohm

25 A

DUAL

R-PDSO-X5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

120 pF

2SK1058-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7 A

SINGLE

R-PSFM-T3

1

SOURCE

Not Qualified

2SK1169-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.25 ohm

20 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.