Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

H5N2005D(S)-(3)

Renesas Electronics

N-CHANNEL

SINGLE

YES

25 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NP60N04VLK-E2-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

NP90N04VUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

HAT2172H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0092 ohm

30 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA1720G

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

6.4 mJ

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.038 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA2450BTL-E1

Renesas Electronics

N-CHANNEL

YES

2.5 W

ENHANCEMENT MODE

8.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.6 A

UPA2725T1A-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

150 A

62 mJ

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0075 ohm

25 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

RJK2076DPA-00#J5A

Renesas Electronics

N-CHANNEL

SINGLE

YES

65 W

200 V

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.085 ohm

20 A

NOT SPECIFIED

NOT SPECIFIED

2SJ76

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1.7 W

PLASTIC/EPOXY

SWITCHING

140 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 A

SINGLE

R-PSFM-T3

SOURCE

Not Qualified

TO-220AB

e0

H7N1002AB-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

UPA1706TP

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

36.1 mJ

28 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.012 ohm

28 A

DUAL

R-PDSO-G8

Not Qualified

e0

HAF2007-90STR

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.12 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

RJE0621JSP-00-J0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA2700GR-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

28.9 mJ

17 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0084 ohm

17 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

RJF0608JSP-00-J0

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.5 W

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

HAT2167N-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

40 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP34N055HHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

10

260

NP84N055NLE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

302 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0094 ohm

84 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

NP60N04HLF-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

FX6ASJ-06-T13

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.37 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

FS20UM-6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.26 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

FK7SM-12

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.63 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

RJK60S5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

192.3 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

UPA1803

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.016 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e0

NP82N055MHE-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

163 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

289 mJ

82 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0086 ohm

82 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

FL14KM-9A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.52 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP90N04VLG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

HAF1010RJ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

.34 ohm

5 A

DUAL

R-PDSO-G8

1

Not Qualified

NP82N06CLC

Renesas Electronics

N-CHANNEL

SINGLE

NO

185 W

ENHANCEMENT MODE

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

UPA1723G-E1-A

Renesas Electronics

TIN BISMUTH

e6

UPA1730G

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

13 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.015 ohm

13 A

DUAL

R-PDSO-G8

Not Qualified

e0

2SJ213(0)-T1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

HAT2031TEL

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.098 ohm

4 A

DUAL

R-PDSO-G8

Not Qualified

2SJ361RYTR

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.5 ohm

2 A

SINGLE

R-PSSO-F3

Not Qualified

e0

RJK6025DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE

YES

25 W

1

.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.8 A

NOT SPECIFIED

NOT SPECIFIED

UPA1820GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

12 A

e6

HAT2025R-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

8 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

NE5500434-T1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

PLASTIC/EPOXY

AMPLIFIER

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN BISMUTH

2 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

e6

UPA1873GR-9JG

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

80 A

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.029 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e0

HAF1003(L)

Renesas Electronics

P-CHANNEL

SINGLE

NO

50 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

18 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.11 ohm

18 A

SINGLE

R-PSIP-T3

Not Qualified

UPA2591T1H-T2-AT

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

16 A

4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

4 A

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

H7N0608LD

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

70 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.012 ohm

70 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

2SJ541-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.155 ohm

15 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

e2

FS16SM-10

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.56 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NP80N03CLE-S12-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

400 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

H7N1004DL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

25 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.045 ohm

25 A

SINGLE

R-PSIP-T3

1

Not Qualified

e6

UPA1707G

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.021 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

e0

NP34N055HLE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.