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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | RJK2076DPA-00#J5A |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Drain-Source On Resistance: .085 ohm; Maximum Drain Current (ID): 20 A; |
Datasheet | RJK2076DPA-00#J5A Datasheet |
NAME | DESCRIPTION |
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Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 20 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum DS Breakdown Voltage: | 200 V |
Maximum Power Dissipation (Abs): | 65 W |
No. of Elements: | 1 |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 20 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .085 ohm |