Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MSC035SMA170B4	Microchip Technology
BSC035N10NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	300 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0035 ohm	100 A	DUAL	R-PDSO-F8	1	DRAIN				e3
IRF540SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	230 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.077 ohm	28 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3
CSD18563Q5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	96 A	146 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0108 ohm	15 A	DUAL	R-PDSO-F5	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	NOT SPECIFIED	260	5.1 pF
FDS9926A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7420TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A		11.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.014 ohm	11.5 A	DUAL	R-PDSO-G8	1			ULTRA LOW RESISTANCE		e3	30	260
IXTA96P085T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	298 W	PLASTIC/EPOXY	SWITCHING	85 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.013 ohm	96 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	460 pF
BSZ100N06LS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	55 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0179 ohm	20 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3
STP80NF10FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	152 A	350 mJ	37 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.015 ohm	38 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IPB017N10N5LFATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	313 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	979 mJ	180 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0017 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263	e3
FDS8984	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	32 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.032 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF540ZLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	92 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	120 mJ	36 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0265 ohm	36 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-262AA	e3	30	260
IRF7309TRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
FDD4141-F085P	Onsemi																								MATTE TIN					1					e3	30	260
NDT3055	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.1 ohm	4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
SI7288DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	15.6 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	50 A	5 mJ	20 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.019 ohm	10 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	40	260
IRLML6401GTRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	33 mJ	4.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	43 ns	-55 Cel	460 ns		.05 ohm	4.3 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY	TO-236AB				125 pF
IRF530PBF-BE3	Vishay Intertechnology
IRFL9014PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	140 mJ	1.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.5 ohm		SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-261AA	e3	30	260
CSD18543Q3A	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	156 A	55 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0156 ohm	12 A	DUAL	R-PDSO-F5	1	DRAIN		AVALANCHE RATED		e3	30	260	6.2 pF
FDT439N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.045 ohm	6.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
SIRA01DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	31.2 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	42 ns	-55 Cel	98 ns		.0049 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	70 pF
VNP35N07-E	STMicroelectronics	N-CHANNEL	COMPLEX	NO	40 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			35 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		SINGLE	R-PSFM-T3					TO-220AB	e3				AEC-Q101
SQ2362ES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	7 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	40 ns	-55 Cel	51 ns	Matte Tin (Sn)	.068 ohm	4.3 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	26 pF	AEC-Q101
IRF640SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.18 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
G3R350MT12J	Genesic Semiconductor
STP11NK50Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	190 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.52 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
FQD5P20TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.8 A	330 mJ	3.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	3.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
2N7002PV,115	NXP Semiconductors	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE				.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			-55 Cel		TIN		.35 A			1					e3	30	260
STP11NK50ZFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	190 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.52 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
SI4946BEY-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	7.2 mJ	6.5 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	35 ns	-55 Cel	55 ns	MATTE TIN	.041 ohm	6.5 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	44 pF
IRF1010NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	290 A	250 mJ	84 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.011 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-252	e3	30	260
SI7157DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	300 A	61.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.0016 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SI7469ADP-T1-RE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	125 A	80 mJ	46 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	46 ns	-55 Cel	82 ns	MATTE TIN	.027 ohm	46 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF
FQB47P06TM-AM002	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	188 A	820 mJ	47 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.026 ohm	47 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQB47P06TM_AM002	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	188 A	820 mJ	47 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.026 ohm	47 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQP30N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	79 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	128 A	350 mJ	32 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.045 ohm	32 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STL60N10F7	STMicroelectronics																																			NOT SPECIFIED	NOT SPECIFIED
G2R1000MT17J	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY	SWITCHING	1700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	45 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel			1.25 ohm	5 A	SINGLE	R-PSSO-G7		DRAIN			TO-263				5 pF	IEC-60747-8-4
G3R450MT17J	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	1700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	59 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel			.63 ohm	8 A	SINGLE	R-PSSO-G7		DRAIN			TO-263				1.5 pF	IEC-60747-8-4
TN2510N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	5 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	20 ns	-55 Cel	30 ns	MATTE TIN	2 ohm	.73 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-243AA	e3	40	260	25 pF
STN1NK80Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A	50 mJ	.25 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	16 ohm	.25 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	6.7 pF
FQP27P06_SW82127	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	560 mJ	27 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	425 ns	-55 Cel	260 ns	Matte Tin (Sn)	.07 ohm	27 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED	155 pF
SQJ469EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	128 A	101 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.025 ohm	32 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3		260
BSP129H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	1.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	20 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN				e3				AEC-Q101
IRF540STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	230 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				PURE MATTE TIN	.077 ohm	28 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB		30	260
G3R350MT12D	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	63 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	43 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel			.455 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN			TO-247				.8 pF	IEC-607478-4
2N7002BKMB,315	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.715 W						ENHANCEMENT MODE	1			.45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			-55 Cel		TIN		.45 A			1					e3	30	260

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.