COMMON EMITTER, 2 ELEMENTS RF Power Bipolar Junction Transistors (BJT) 31

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration (1)
    • COMMON EMITTER, 2 ELEMENTS
    • COMMON BASE, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

MRF392

Onsemi

NPN

COMMON EMITTER, 2 ELEMENTS

YES

16 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

8

FLANGE MOUNT

200 Cel

95 pF

SILICON

30 V

DUAL

R-CDFM-F8

Not Qualified

HIGH RELIABILITY

SD1732(TDS595)

STMicroelectronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

2.6 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

200 Cel

20 pF

SILICON

18 V

DUAL

R-PDFM-F4

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

SD1660

STMicroelectronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

310 W

.4 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

100 pF

SILICON

30 V

DUAL

R-PDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

SD1680

STMicroelectronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

310 W

.4 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

100 pF

SILICON

30 V

DUAL

R-PDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

SD1476

STMicroelectronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

25 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

220 pF

SILICON

40 V

DUAL

R-PDFM-F4

EMITTER

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

SD4010

STMicroelectronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

88.8 W

1.35 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

25

200 Cel

36 pF

SILICON

28 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH EFFICIENCY

SD1732

STMicroelectronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

65 W

.85 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

20 pF

SILICON

25 V

NICKEL

DUAL

R-PDFM-F4

EMITTER

Not Qualified

HIGH EFFICIENCY

SD4590

STMicroelectronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

300 W

25 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

25

200 Cel

SILICON

28 V

NICKEL

DUAL

R-PDFM-F4

EMITTER

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

BLV945B

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

60 W

30

200 Cel

30 pF

SILICON

27 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

TPV8100B

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

215 W

30

200 Cel

SILICON

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR

BLV2048

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

500 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

500 W

45

200 Cel

SILICON

27 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

BLV57

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

2500 MHz

77 W

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

8

FLANGE MOUNT

Other Transistors

77 W

15

200 Cel

30 pF

SILICON

27 V

DUAL

R-CDFM-F8

ISOLATED

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

BLV859

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

145 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

30

200 Cel

SILICON

28 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

BLV857

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

80 W

7.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

80 W

30

200 Cel

SILICON

28 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

BLV861

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

220 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

220 W

30

200 Cel

SILICON

30 V

DUAL

R-CDFM-F4

1

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

BLV38

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

2

VERY HIGH FREQUENCY BAND

5

FLANGE MOUNT

290 W

15

200 Cel

SILICON

40 V

DUAL

R-CDFM-F5

ISOLATED

Not Qualified

MRF897R

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

105 W

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

105 W

30

150 Cel

28 pF

SILICON

30 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLV58

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

87 W

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

87 W

30

200 Cel

45 pF

SILICON

27 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

BLV37

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10.5 dB

FLAT

RECTANGULAR

2

VERY HIGH FREQUENCY BAND

5

FLANGE MOUNT

290 W

15

200 Cel

SILICON

36 V

DUAL

R-CDFM-F5

ISOLATED

Not Qualified

BLV897

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

SILICON

30 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

933582620112

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

2500 MHz

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

8

FLANGE MOUNT

30 pF

SILICON

27 V

DUAL

R-CDFM-F8

ISOLATED

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLV948

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

320 W

30

200 Cel

90 pF

SILICON

28 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

MRF899

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

230 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

230 W

30

150 Cel

SILICON

28 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLV947

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

1.65 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

200 W

30

200 Cel

SILICON

28 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

BLV950

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

340 W

30

200 Cel

SILICON

30 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

BLV945A

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

60 W

30

200 Cel

30 pF

SILICON

27 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

MRF897

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

105 W

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

105 W

30

150 Cel

28 pF

SILICON

30 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLV862

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

350 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

350 W

30

200 Cel

SILICON

30 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

PTB20081

Infineon Technologies

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20017

Infineon Technologies

NPN

COMMON EMITTER, 2 ELEMENTS

YES

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

e3

2SC3286-M

Renesas Electronics

NPN

COMMON EMITTER, 2 ELEMENTS

YES

.28 W

24 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

240 pF

SILICON

32 V

DUAL

R-CDFM-F4

EMITTER

HIGH RELIABILITY

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.