Toshiba RF Power Field Effect Transistors (FET) 389

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Manufacturers (1)
    • Toshiba
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

TIM7785-8SL-031

Toshiba

Not Qualified

NOT SPECIFIED

240

TPM2323-30

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RFM08U9X

Toshiba

N-CHANNEL

SINGLE

YES

20 W

UNSPECIFIED

FLAT

RECTANGULAR

1

5 A

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

QUAD

R-XQFP-F4

Not Qualified

TIM1011-2

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

2.6 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM7785-4SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

3.5 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

23 W

175 Cel

GALLIUM ARSENIDE

3.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5964-25UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

20 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

100 W

175 Cel

GALLIUM ARSENIDE

20 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

30

260

TIM1011-5L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

5.7 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

30 W

175 Cel

GALLIUM ARSENIDE

5.7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM3742-16SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

14 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

GALLIUM ARSENIDE

14 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

JS8856-AS

Toshiba

N-CHANNEL

YES

UNSPECIFIED

AMPLIFIER

15 V

NO LEAD

RECTANGULAR

DEPLETION MODE

KU BAND

2

UNCASED CHIP

JUNCTION

GALLIUM ARSENIDE

TIN LEAD

2.6 A

UPPER

R-XUUC-N2

Not Qualified

e0

TIM7179-8L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

8 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

37.5 W

175 Cel

GALLIUM ARSENIDE

8 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM1414-5L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

5.7 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

30 W

175 Cel

GALLIUM ARSENIDE

5.7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

30

260

S8838A

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

10 W

175 Cel

GALLIUM ARSENIDE

2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM7179-14L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

13 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

60 W

175 Cel

GALLIUM ARSENIDE

13 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM1011-8L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

Other Transistors

JUNCTION

60 W

175 Cel

GALLIUM ARSENIDE

10.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5359-16L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

16 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

70 W

175 Cel

GALLIUM ARSENIDE

16 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM5053-4SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

3.5 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

23.1 W

175 Cel

GALLIUM ARSENIDE

3.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM1414-4LA-371

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

5.2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TGI7785-130LH

Toshiba

TIM1415-8

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

10.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM7179-4UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

3.5 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

23 W

175 Cel

GALLIUM ARSENIDE

3.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM1415-4

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

5.2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM4450-8L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

8 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

37.5 W

175 Cel

GALLIUM ARSENIDE

8 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM6472-30L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

26 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

120 W

175 Cel

GALLIUM ARSENIDE

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TPM2626-14

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

13 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM6472-35SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

26 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

115 W

175 Cel

GALLIUM ARSENIDE

20 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM8996-30

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

20 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

136 W

175 Cel

GALLIUM ARSENIDE

20 A

DUAL

R-CDFM-F2

SOURCE

JS9P03-AS

Toshiba

N-CHANNEL

SINGLE

DEPLETION MODE

1

KA BAND

6

DIE

JUNCTION

GALLIUM ARSENIDE

TIN LEAD

DIE-6

Not Qualified

e0

TIM6472-16SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

14 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

GALLIUM ARSENIDE

14 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

2SK3074(TE12L,F)

Toshiba

TIM0910-30L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

20 A

DUAL

R-CDFM-F2

SOURCE

TIM5964-30LA

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

26 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

120 W

175 Cel

GALLIUM ARSENIDE

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM1011-5

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

5.7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5964-45SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

31 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 W

175 Cel

GALLIUM ARSENIDE

20 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

30

260

TIM7785-16

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

16 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM6472-16EL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

18 A

DUAL

R-CDFM-F2

SOURCE

TIM1414-10LA

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

60 W

175 Cel

GALLIUM ARSENIDE

11.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM1011-10

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

11.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

2SK1310A

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

250 W

CERAMIC, METAL-SEALED COFIRED

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

VERY HIGH FREQUENCY BAND

12 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

12 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

TIM1213-2

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2.6 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

15 W

175 Cel

GALLIUM ARSENIDE

2.6 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TGI5867-130LH

Toshiba

TIM7785-8SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

7 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

37.5 W

175 Cel

GALLIUM ARSENIDE

7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM1414-4LA

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

5.2 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

30 W

175 Cel

GALLIUM ARSENIDE

5.2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM1414-15

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

11.5 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

60 W

175 Cel

GALLIUM ARSENIDE

11.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM1112-4UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

3.3 A

DUAL

R-CDFM-F2

SOURCE

TIM5867-8UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

7 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

42.9 W

175 Cel

SILICON

2.6 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

2SK3079A

Toshiba

N-CHANNEL

SINGLE

YES

20 W

UNSPECIFIED

AMPLIFIER

10 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 A

QUAD

R-XQSO-F4

SOURCE

Not Qualified

TIM1011-4

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

5.2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5964-14L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

13 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

60 W

175 Cel

GALLIUM ARSENIDE

13 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.