Toshiba RF Power Field Effect Transistors (FET) 389

  1. Home
  2. RF Power Field Effect Transistors (FET)
Manufacturers (1)
    • Toshiba
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

TIM7785-30L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

26 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

120 W

175 Cel

GALLIUM ARSENIDE

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM3536-60

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

46 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

185 W

175 Cel

GALLIUM ARSENIDE

46 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM1011-4L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

5.2 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

30 W

175 Cel

GALLIUM ARSENIDE

5.2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3074(TE12L

Toshiba

TIM3742-35SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

26 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

115 W

175 Cel

GALLIUM ARSENIDE

20 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM1414-7

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

5.7 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

30 W

175 Cel

GALLIUM ARSENIDE

5.7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

30

260

TGI5059-120L

Toshiba

TPM2323-14

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

13 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM5053-16

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

16 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

70 W

175 Cel

GALLIUM ARSENIDE

16 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM3742-4SL-341

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

3.5 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

23 W

175 Cel

GALLIUM ARSENIDE

3.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM7179-4SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

3.5 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

23 W

175 Cel

GALLIUM ARSENIDE

3.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM3742-16UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

14 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

GALLIUM ARSENIDE

14 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM8596-2

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

2.6 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

15 W

175 Cel

GALLIUM ARSENIDE

2.6 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

30

260

TIM6472-60SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

20 A

DUAL

R-CDFM-F2

SOURCE

JS9P05-AS

Toshiba

N-CHANNEL

SINGLE

DEPLETION MODE

1

KA BAND

6

DIE

JUNCTION

GALLIUM ARSENIDE

TIN LEAD

DIE-6

Not Qualified

e0

TIM0910-2

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2.6 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

25 W

175 Cel

GALLIUM ARSENIDE

2.6 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM1314-15ULA

Toshiba

TIM5964-35SLA-151

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

26 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

115 W

175 Cel

SILICON

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5359-4UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

3.5 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

25 W

175 Cel

GALLIUM ARSENIDE

3.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM5359-4SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

3.5 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

23.1 W

175 Cel

GALLIUM ARSENIDE

3.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TGI1314-25LA

Toshiba

TIM8596-15

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

2

FLANGE MOUNT

Other Transistors

JUNCTION

60 W

175 Cel

GALLIUM ARSENIDE

11.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM7785-7L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

6.5 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

30 W

175 Cel

GALLIUM ARSENIDE

6.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM1011-15

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

11.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5964-8UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

7 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

37.5 W

175 Cel

GALLIUM ARSENIDE

7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM7785-12UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

10 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

62.5 W

175 Cel

GALLIUM ARSENIDE

10 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

30

260

TIM4450-60SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

26 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

215 W

175 Cel

GALLIUM ARSENIDE

15 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM1314-8UL

Toshiba

TIM5053-16SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

14 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

75 W

175 Cel

GALLIUM ARSENIDE

14 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIM4951-4

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

4 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

20 W

175 Cel

GALLIUM ARSENIDE

4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM1515-2-191

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

SILICON

2.6 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM1011-8

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

10.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5964-7L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

6.5 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

30 W

175 Cel

GALLIUM ARSENIDE

6.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

2SK3476

Toshiba

N-CHANNEL

SINGLE

YES

20 W

UNSPECIFIED

AMPLIFIER

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3 A

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 A

QUAD

R-XQFP-F4

SOURCE

Not Qualified

TIM3742-30SL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

20 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

115.4 W

175 Cel

SILICON

22 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM7984-14L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

13 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

60 W

175 Cel

GALLIUM ARSENIDE

13 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5359-30L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM7179-6UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

5 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

32.5 W

175 Cel

GALLIUM ARSENIDE

5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TPM1919-60

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

46 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

JS9P09-AS

Toshiba

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

2

UNCASED CHIP

UPPER

R-XUUC-N2

Not Qualified

TIM6472-4L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

4 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

20 W

175 Cel

GALLIUM ARSENIDE

4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

TIM5964-12UL

Toshiba

N-CHANNEL

SINGLE

YES

UNSPECIFIED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

10 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

62.5 W

175 Cel

GALLIUM ARSENIDE

10 A

DUAL

R-XDFM-F2

SOURCE

Not Qualified

30

260

TIM4951-30L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

26 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

120 W

175 Cel

GALLIUM ARSENIDE

26 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

TIM1213-10L

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

Other Transistors

JUNCTION

60 W

175 Cel

GALLIUM ARSENIDE

11.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

JS9P10-AS

Toshiba

N-CHANNEL

SINGLE

DEPLETION MODE

1

KA BAND

2

DIE

JUNCTION

GALLIUM ARSENIDE

TIN LEAD

DIE-2

Not Qualified

e0

TGI7785-60LHA

Toshiba

TIM6472-12UL

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

10 A

2

FLANGE MOUNT

Other Transistors

JUNCTION

62.5 W

175 Cel

GALLIUM ARSENIDE

10 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

30

260

S9G08A

Toshiba

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

13 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

240

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.