.21 W RF Small Signal Bipolar Junction Transistors (BJT) 25

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BFG325W/XR,115

NXP Semiconductors

NPN

SINGLE

YES

14000 MHz

.21 W

.035 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

L BAND

4

SMALL OUTLINE

Other Transistors

60

175 Cel

.4 pF

SILICON

6 V

TIN

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

LOW NOISE

e3

BFG325/XR,215

NXP Semiconductors

NPN

SINGLE

YES

14000 MHz

.21 W

.035 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

L BAND

4

SMALL OUTLINE

Other Transistors

60

175 Cel

.4 pF

SILICON

6 V

TIN

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

LOW NOISE

e3

BFG325/XR

NXP Semiconductors

NPN

SINGLE

YES

14000 MHz

.21 W

.035 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

L BAND

4

SMALL OUTLINE

Other Transistors

60

175 Cel

.4 pF

SILICON

6 V

TIN

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

LOW NOISE

e3

BFG325W/XR

NXP Semiconductors

NPN

SINGLE

YES

14000 MHz

.21 W

.035 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

L BAND

4

SMALL OUTLINE

Other Transistors

60

175 Cel

.4 pF

SILICON

6 V

TIN

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

LOW NOISE

e3

BFP360W

Infineon Technologies

NPN

SINGLE

YES

14000 MHz

.21 W

.035 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

S BAND

4

SMALL OUTLINE

Other Transistors

60

150 Cel

.5 pF

SILICON

6 V

Matte Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

LOW NOISE

e3

BFS466L6

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS

YES

22000 MHz

.21 W

.035 A

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

2

L BAND

6

CHIP CARRIER

Other Transistors

90

150 Cel

.45 pF

SILICON

6 V

MATTE TIN

BOTTOM

R-XBCC-N6

COLLECTOR

Not Qualified

LOW NOISE

e3

BFS360L6

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS

YES

14000 MHz

.21 W

.035 A

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

2

S BAND

6

CHIP CARRIER

Other Transistors

60

150 Cel

SILICON

6 V

BOTTOM

R-XBCC-N6

COLLECTOR

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

BFR360L3

Infineon Technologies

NPN

SINGLE

YES

14000 MHz

.21 W

.035 A

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

1

S BAND

3

CHIP CARRIER

Other Transistors

90

150 Cel

.4 pF

SILICON

6 V

GOLD

BOTTOM

R-XBCC-N3

1

COLLECTOR

Not Qualified

LOW NOISE

e4

BFR360F

Infineon Technologies

NPN

SINGLE

YES

14000 MHz

.21 W

.035 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

60

150 Cel

.5 pF

SILICON

6 V

TIN

DUAL

R-PDSO-F3

1

Not Qualified

LOW NOISE

e3

UPA841TD-T3

Renesas Electronics

NPN

YES

3500 MHz

.21 W

.03 A

Other Transistors

75

150 Cel

UPA854TD-T3-A

Renesas Electronics

NPN

SEPARATE, 2 ELEMENTS

YES

12000 MHz

.21 W

.03 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

2

L BAND

6

SMALL OUTLINE

Other Transistors

75

150 Cel

.7 pF

SILICON

6 V

DUAL

R-PDSO-F6

10

260

UPA891TD-T3

Renesas Electronics

NPN

YES

3500 MHz

.21 W

.1 A

Other Transistors

100

150 Cel

UPA855TD-T3

Renesas Electronics

NPN

YES

.21 W

.1 A

Other Transistors

70

150 Cel

UPA892TD

Renesas Electronics

NPN

YES

18000 MHz

.21 W

.035 A

Other Transistors

50

150 Cel

UPA831TD-T3

Renesas Electronics

NPN

SEPARATE, 2 ELEMENTS

YES

4500 MHz

.21 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

Other Transistors

70

150 Cel

1.5 pF

SILICON

12 V

DUAL

R-PDSO-F6

Not Qualified

LOW NOISE

UPA831TD

Renesas Electronics

NPN

SEPARATE, 2 ELEMENTS

YES

4500 MHz

.21 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

Other Transistors

70

150 Cel

1.5 pF

SILICON

12 V

DUAL

R-PDSO-F6

Not Qualified

LOW NOISE

UPA862TD-T3-A

Renesas Electronics

NPN

YES

10000 MHz

.21 W

.1 A

Other Transistors

75

150 Cel

UPA854TD

Renesas Electronics

NPN

SEPARATE, 2 ELEMENTS

YES

12000 MHz

.21 W

.03 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

2

L BAND

6

SMALL OUTLINE

Other Transistors

75

150 Cel

.7 pF

SILICON

6 V

DUAL

R-PDSO-F6

NOT SPECIFIED

NOT SPECIFIED

UPA855TD

Renesas Electronics

NPN

YES

.21 W

.1 A

Other Transistors

70

150 Cel

UPA854TD-T3

Renesas Electronics

NPN

SEPARATE, 2 ELEMENTS

YES

12000 MHz

.21 W

.03 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

2

L BAND

6

SMALL OUTLINE

Other Transistors

75

150 Cel

.7 pF

SILICON

6 V

DUAL

R-PDSO-F6

NOT SPECIFIED

NOT SPECIFIED

UPA841TD

Renesas Electronics

NPN

YES

3500 MHz

.21 W

.03 A

Other Transistors

75

150 Cel

UPA869TD

Renesas Electronics

NPN

YES

3000 MHz

.21 W

.1 A

Other Transistors

100

150 Cel

NOT SPECIFIED

NOT SPECIFIED

UPA891TD

Renesas Electronics

NPN

YES

3500 MHz

.21 W

.1 A

Other Transistors

100

150 Cel

UPA892TD-T3

Renesas Electronics

NPN

YES

18000 MHz

.21 W

.035 A

Other Transistors

50

150 Cel

UPA869TD-T3

Renesas Electronics

NPN

YES

3000 MHz

.21 W

.1 A

Other Transistors

100

150 Cel

NOT SPECIFIED

NOT SPECIFIED

RF Small Signal Bipolar Junction Transistors (BJT)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.