N-CHANNEL RF Small Signal Field Effect Transistors (FET) 2,218

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type (1)
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MMBFJ310LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

2.5 pF

D2081UK

Tt Electronics Plc

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

11 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

.5 pF

SMMBFJ310LT1G

Onsemi

N-CHANNEL

YES

.225 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

MMBF4416A

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

.8 pF

2N4416A

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

35 V

10 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.8 pF

BF998E6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

MMBFJ309LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

2.5 pF

MMBFJ310LT3G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2.5 pF

MMBF4416

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

18 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

FET General Purpose Power

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

.9 pF

2N3819

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

4 pF

NE3210S01-T1B

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

.07 A

4

MICROWAVE

FET RF Small Signal

HETERO-JUNCTION

.165 W

125 Cel

SILICON

TIN LEAD

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

e0

30

230

2N4416

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

30 V

10 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.8 pF

D2089UK

Tt Electronics Plc

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

DISK BUTTON

METAL-OXIDE SEMICONDUCTOR

SILICON

GOLD

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e4

.5 pF

ATF-55143-TR1G

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.1 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.27 W

150 Cel

SILICON

MATTE TIN

.1 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

ATF-551M4-TR1

Broadcom

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

5 V

15.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

CHIP CARRIER

FET RF Small Signal

HIGH ELECTRON MOBILITY

.27 W

150 Cel

SILICON

GOLD

.1 A

BOTTOM

R-XBCC-N4

1

Not Qualified

LOW NOISE

e4

260

NE5550279A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.6 A

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

6.25 W

150 Cel

SILICON

.6 A

QUAD

R-XQMW-F4

SOURCE

NE5550279A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.6 A

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

6.25 W

150 Cel

SILICON

.6 A

QUAD

R-XQMW-F4

SOURCE

NE3210S01

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

3 V

12 dB

GULL WING

ROUND

DEPLETION MODE

1

KU BAND

4

DISK BUTTON

HETERO-JUNCTION

SILICON

TIN LEAD

.015 A

RADIAL

O-XRDB-G4

SOURCE

Not Qualified

e0

30

230

ATF-36163-BLKG

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

9.4 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

KU BAND

.04 A

6

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.18 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.04 A

DUAL

R-PDSO-G6

1

Not Qualified

LOW NOISE

e3

260

SMMBFJ309LT1G

Onsemi

N-CHANNEL

YES

.225 W

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

MMBF4416LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

30 V

10 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

.8 pF

MMBF4416LT1

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

30 V

10 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

.8 pF

2SK197

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

J310

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

WIRE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

TO-226AA

e0

2.5 pF

BF998WR,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

30

260

BF998R,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

30

260

TGF2023-2-01

Qorvo

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

1.25 A

UPPER

R-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

BF998,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

30

260

MMBFJ310

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2.5 pF

CLF1G0035-100PU

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

R-CDFM-F4

SOURCE

IEC-60134

NE3210S01-T1B-A

Renesas Electronics

N-CHANNEL

.07 A

FET RF Small Signal

.165 W

125 Cel

.07 A

NE3515S02-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

.025 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SMMBFJ310LT3G

Onsemi

N-CHANNEL

YES

.225 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

ATF-54143-TR1G

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.12 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.725 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.12 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

ATF-34143-TR1G

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

.725 W

160 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

BF545B

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

NE3515S02-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

.025 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLF184XRS

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

135 V

22.8 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F4

SOURCE

IEC-60134

MMBF5484LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

.225 W

150 Cel

SILICON

-55 Cel

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

1 pF

2N3819PBFREE

Central Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

.36 W

150 Cel

SILICON

-65 Cel

MATTE TIN OVER NICKEL

BOTTOM

O-PBCY-T3

TO-92

e3

4 pF

PMBFJ309,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.5 pF

BLF521

NXP Semiconductors

N-CHANNEL

SINGLE

YES

10 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

40 V

10 dB

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1 A

4

DISK BUTTON

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

10 W

200 Cel

SILICON

1 A

RADIAL

O-CRDB-F4

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MMBF5484LT1

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

.225 W

150 Cel

SILICON

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

1 pF

MMBFU310LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

2.5 pF

NE3210S01-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

.07 A

4

MICROWAVE

FET RF Small Signal

HETERO-JUNCTION

.165 W

125 Cel

SILICON

TIN LEAD

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

e0

30

230

ATF-551M4-TR1G

Agilent Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

15.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

CHIP CARRIER

HIGH ELECTRON MOBILITY

SILICON

TIN

.1 A

BOTTOM

R-CBCC-N4

1

Not Qualified

LOW NOISE

e3

BF513,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

.03 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

30

260

.4 pF

MMBF5486

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1 pF

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.