Fujitsu RF Small Signal Field Effect Transistors (FET) 7

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features
FHX35LG	Fujitsu	N-CHANNEL	SINGLE	YES	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	4 V	8.5 dB	FLAT	ROUND	DEPLETION MODE	1	KU BAND	4	DISK BUTTON	FET RF Small Signal	HIGH ELECTRON MOBILITY	.29 W	175 Cel	GALLIUM ARSENIDE	RADIAL	O-CRDB-F4	SOURCE	Not Qualified	HIGH RELIABILITY
FHX35LG/002	Fujitsu	N-CHANNEL	SINGLE	YES	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6 V		FLAT	UNSPECIFIED	DEPLETION MODE	1		4	DISK BUTTON	FET RF Small Signal	HIGH ELECTRON MOBILITY	.29 W	175 Cel	SILICON	UNSPECIFIED	X-CXDB-F4	SOURCE	Not Qualified	LOW NOISE
FLC057WG	Fujitsu	N-CHANNEL	SINGLE	YES	CERAMIC, METAL-SEALED COFIRED		15 V		FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND	2	FLANGE MOUNT	Other Transistors	JUNCTION	3.75 W	175 Cel	GALLIUM ARSENIDE	DUAL	R-CDFM-F2	SOURCE	Not Qualified	HIGH RELIABILITY
FHX35X	Fujitsu	N-CHANNEL	SINGLE	YES	UNSPECIFIED	AMPLIFIER	4 V	8.5 dB	NO LEAD	RECTANGULAR	DEPLETION MODE	1	KU BAND	4	UNCASED CHIP	FET RF Small Signal	HIGH ELECTRON MOBILITY	.29 W	175 Cel	GALLIUM ARSENIDE	UPPER	R-XUUC-N4		Not Qualified	HIGH RELIABILITY, LOW NOISE
FLC301XP	Fujitsu	N-CHANNEL	SINGLE	YES	UNSPECIFIED				NO LEAD	RECTANGULAR	DEPLETION MODE	1	S BAND	12	UNCASED CHIP		HIGH ELECTRON MOBILITY			GALLIUM ARSENIDE	UPPER	R-XUUC-N12		Not Qualified
FLU17XM	Fujitsu	N-CHANNEL	SINGLE	YES	CERAMIC, METAL-SEALED COFIRED		15 V		FLAT	RECTANGULAR	DEPLETION MODE	1	L BAND	4	MICROWAVE	Other Transistors	JUNCTION	7.5 W	175 Cel	GALLIUM ARSENIDE	QUAD	R-CQMW-F4	SOURCE	Not Qualified	HIGH RELIABILITY
FSX017LG	Fujitsu	N-CHANNEL	SINGLE	YES	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8 V		FLAT	UNSPECIFIED	DEPLETION MODE	1	X BAND	4	DISK BUTTON	Other Transistors	JUNCTION	.22 W	175 Cel	GALLIUM ARSENIDE	UNSPECIFIED	X-CXDB-F4	SOURCE	Not Qualified	HIGH RELIABILITY

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.